NTF3055L108T3LFG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTF3055L108T3LFG is a small signal field effect transistor (FET). This type of FET is commonly referred to as a single-gate MOSFET. A single-gate MOSFET is the simplest type of field effect transistor (FET). In a single-gate MOSFET, a small current applied to the gate of the FET controls a larger current between the source and drain of the FET.

The NTF3055L108T3LFG is a N-channel enhancement type MOSFET. It is a medium power FET that is constructed of an N-channel and has a diameter of 1.25mm. The breakdown voltage of the FET is rated at 8V and the maximum power dissipation is 500mW.

The NTF3055L108T3LFG is designed for use in applications requiring low noise and high speed switching, such as radio transmission and high speed logic circuits. The FET can also be used in power amplifier circuits, high frequency sensing and level shaping circuits, as well as in many other electronic circuits.

The NTF3055L108T3LFG is used in a variety of applications due to its high temperature operating capability, low on-resistance, low internal capacitance, and high switching speed. The FET works by allowing a small amount of current to control a larger amount of current between its source and drain. This is known as field effect conduction. When a voltage is applied to the gate of the NTF3055L108T3LFG, a field is created that modulates the conductivity of the channel between the source and drain. This field makes the channel more or less conductive to the current flowing between the source and the drain.

The NTF3055L108T3LFG is commonly used in the following application areas: power controllers, motor control, RF power amplifiers and switching applications. The FET can be used in switching applications because it can handle a wide range of turning on and off times. This makes it useful for power supplies, inverters, switching regulators, and other electronic circuits that require accurate and repeatable switching.

The NTF3055L108T3LFG FET can also be used in radio frequency (RF) power amplifier circuits. In this application, the FET provides low on-resistance and low gate lag. This low gate lag coupled with the high temperature operating capability makes the FET ideally suited for use in RF power amplifier designs. The FET also works well in high frequency sensing and level shaping circuits due to its low internal capacitance and high switching speed.

In summary, the NTF3055L108T3LFG is a small signal FET that is commonly used in applications requiring low noise and high speed switching, including radio transmission and high speed logic circuits. In addition, the FET is used in applications such as power controllers, motor control, RF power amplifiers, and level shaping circuits. The FET is highly reliable and provides excellent switching performance.

The specific data is subject to PDF, and the above content is for reference