NTF3055L108T3G Discrete Semiconductor Products |
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Allicdata Part #: | NTF3055L108T3GOSTR-ND |
Manufacturer Part#: |
NTF3055L108T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 3A SOT223 |
More Detail: | N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | NTF3055L108T3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 1.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTF3055L108T3G are depletion mode MOSFETs. This component is a popular choice for low current medical, automotive, and telecom applications. The NTF3055L108T3G has a maximum current rating of 8A and a maximum drain-source voltage of 30V. This device also utilizes a package designed for surface mount technology.
A MOSFET is a field-effect transistor that allows current flow between its source and beam when a voltage is applied to the gate. It is a type of controlled transistor because it can be used as a switch on or off, making it a versatile component in electronic circuits. MOSFETs also require very little current to operate and can handle higher currents than most other types of transistors. MOSFETs are also often utilized in power supplies, signal amplifiers, and other circuits that require the influence of current.
The NTF3055L108T3G is commonly used in medical, automotive, and telecom applications because its low current drain, low noise, and low on-resistance are beneficial in these applications. In medical applications, it is used in low power applications such as pump circuits, battery powered systems, or medical sensors. It is also used in automotive applications that require low current such as control circuits, ignition systems, and LED lighting systems. The NTF3055L108T3G is also used in telecom applications such as power amplifiers and switching circuits.
The NTF3055L108T3G utilizes the common MOSFET drain–source configuration with a gate connecting to the Source Terminal. It works similarly to other depletion-type FETs. When a negative voltage is applied to the Gate Terminal, a “channel” is opened between the Source and Drain Terminals, which allows current to flow between them. In the off state, no voltage is applied to the Gate and the channel is closed, blocking any current flow.
The NTF3055L108T3G have a High-Side enhancement mode, which makes them suitable for applications of higher frequencies or for protection of limited voltage. The NTF3055L108T3G also has low drain-source resistance and low power consumption, making them highly efficient. In addition, the NTF3055L108T3G is also temperature and noise tolerant, making them ideal for applications in harsh environments. Moreover, this component also has a high voltage rating of up to 30V, enabling it to support high power applications.
The NTF3055L108T3G also comes with a package designed for surface mount technology, which is ideal for applications with limited space and weight requirements. Additionally, this component has a high maximum current rating of 8A, which is beneficial in high power applications.
Overall, the NTF3055L108T3G are an excellent choice for low current application in the medical, automotive, and telecom industries. The device has a low current drain, low noise, and low on-resistance, making it ideal for these application industries. In addition, the NTF3055L108T3G also provides a high voltage rating and a high maximum current, making it suitable for high power applications. This component also has a package designed for surface mount technology, providing superior performance in limited space applications.
The specific data is subject to PDF, and the above content is for reference
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