NTF3055L175T1G Discrete Semiconductor Products |
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Allicdata Part #: | NTF3055L175T1GOSTR-ND |
Manufacturer Part#: |
NTF3055L175T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 2A SOT223 |
More Detail: | N-Channel 60V 2A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | NTF3055L175T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 (TO-261) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 1A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTF3055L175T1G Application Field and Working Principle
NTF3055L175T1G transistors are semiconductor devices that are primarily used as electronic switches in electronic circuits. They are also known as field-effect transistors (FETs) or Metal-Oxide-Semiconductor FETs (MOSFETs). NTF3055L175T1G transistors are ideal for use in audio power applications because they provide high current capability, low voltage drop, and low levels of noise and distortion. The NTF3055L175T1G are single FETs and are able to control large currents and voltages.
Application Field
NTF3055L175T1G transistors are used in a variety of applications including audio power amplifiers, instrumentation amplifiers, and audio power applications. They are suitable for use in both analog and digital circuits. NTF3055L175T1G transistors can be used for switching power supplies, motor drivers, variable speed drives, high power audio amplifiers, input stages of audio amplifiers, and a variety of power management and processor applications.
Working Principle
The NTF3055L175T1G transistor is an insulated-gate type field-effect transistor (IGFET) that operates by controlling the width of a "channel" between the source and the drain electrodes. As a result, the transconductance and properties of the transistor vary with the voltage applied to the gate. An increase in the gate voltage causes the channel width to decrease, resulting in a decrease in current. Conversely, decreasing the gate voltage increases the channel width, increasing the current. The current can then be adjusted by changing the voltage on the gate terminal.
The NTF3055L175T1G uses a p-type substrate for increased power output and can handle an operating voltage up to 175V and a peak voltage up to 250V. It also features thermal and over-temperature protection, as well as frequency protection, which prevents the transistor from malfunctioning due to an extended exposure to certain high frequencies. In addition, the NTF3055L175T1G provides reverse current blocking and minimized inductance in order to help reduce noise and ensure long-term reliability.
The NTF3055L175T1G transistor is ideal for use in a variety of DC to AC applications and audio power applications. With its low on-resistance and low capacitance, the device is able to provide improved sound quality while still being capable of driving large currents. The NTF3055L175T1G can also be used in a variety of analog circuits, making it well-suited for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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