NTF3055L108T3LF Allicdata Electronics
Allicdata Part #:

NTF3055L108T3LFOS-ND

Manufacturer Part#:

NTF3055L108T3LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 3A SOT223
More Detail: N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-...
DataSheet: NTF3055L108T3LF datasheetNTF3055L108T3LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTF3055L108T3LF is a FET transistor specifically designed for a range of power management applications. The transistor is a single Junction Field Effect Transistor (JFET), or single MOSFET, which is capable of controlling both AC and DC signals. The device is a part of a discrete semiconductor family and is also known as VGFS-type Field Effect Transistor.

The NTF3055L108T3LF is built in three sections; the drain, source and gate. The drain and source are joined together and the material which conducts the electrical current between them is the switching material called the gate. The transistor is designed with N type material so that the current will flow through the drain-source connection when an electric field is applied across the gate contacts.

The working principle of the NTF3055L108T3LF is based on the voltage source. It has two terminal voltages and four terminals. When a positive voltage is applied to the drain, the channel between the drain and the source narrows down and the current flowing from the drain to the source is reduced. This is a result of the electrons scattered by the electric field which creates a barrier of ions between the drain and the source which is known as a gate voltage offset. This is popularly known as the pinch-off voltage.

The NTF3055L108T3LF is used in a variety of applications such as power switching in DCDC converters and power amplifiers, power management in chargers, and control and switching in telecom equipment. It is also suitable for automotive applications such as pre-charge, low-side drive and high-side drive in safety systems. The transistor is also used in other high current switching applications such as audio amplifiers. Its anti-parallel diode provides high speed switching and protection against reverse voltage of up to 400V.

The NTF3055L108T3LF also has a superior noise immunity properties compared to standard FETs, which makes it suitable for use in environments with high levels of electromagnetic noise. It comes with a three-line data sheet which provides information on its features and recommended operating conditions. It is capable of handling a current of up to 28 A and a voltage of up to 400V. The NTF3055L108T3LF is RoHS compliant and is available in a SOT-23 package. It operates on operating temperature ranging from -55°C to +150°C.

In conclusion, the NTF3055L108T3LF is a single Junction Field Effect Transistor (JFET) which is mainly used for power management applications. It is capable of control both AC and DC signals and can handle a current up to 28A and a voltage of up to 400V. It offers superior noise immunity and is RoHS compliant. It is available in a SOT-23 package and can operate on temperature ranging from -55°C to +150°C.

The specific data is subject to PDF, and the above content is for reference

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