
Allicdata Part #: | NTF3055-100T3LFOS-ND |
Manufacturer Part#: |
NTF3055-100T3LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 3A SOT223 |
More Detail: | N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTF3055-100T3LF is an advanced MOSFET transistor device with multiple applications and working principles.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is a three-terminal, four-layered Field Effect Transistor. The device allows current or voltage to be controlled using an electric field. It is commonly used in integrated circuits, amplifiers and other advanced applications.
The NTF3055-100T3LF is a high performance device with a drain - source breakdown voltage of 100V (VDSS). This device is capable of withstanding a maximum peak drain current of 30A. It has an on resistance of 0.055ohm (Rds(on)) and can operate between -55℃ to 175℃. The NTF3055-100T3LF also has a maximum gate threshold voltage of 1.8V.
The device is commonly used in power supply applications. By controlling the voltage and current passing through the NTF3055-100T3LF, it is possible to control the output of power supplies. It can also be used in motor control and other switching applications.
The metal oxide semiconductor structure and ESD protection makes this device ideal for high-reliability applications. It is a popular choice for use in industrial and military applications.
The working principle of the NTF3055-100T3LF is based on the transfer of electrons through its gate. When a voltage is applied to the gate, electrons are transferred to the gate and the resistance of the device increases. This increase in resistance is known as the “on state”. When a reverse voltage is applied to the gate, electrons are ejected from the gate, so it reduces the resistance of the device. This is called the “off state”.
In conclusion, the NTF3055-100T3LF is an advanced MOSFET transistor, which has multiple applications and a working principle based on the transfer of electrons through its gate. The device is suitable for power supply, motor control and other switching applications. It is also an ideal choice for high-reliability applications because of its metal oxide semiconductor structure and ESD protection.
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