NVD4805NT4G Allicdata Electronics
Allicdata Part #:

NVD4805NT4G-ND

Manufacturer Part#:

NVD4805NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 88A DPAK
More Detail: N-Channel 30V 12.7A (Ta), 95A (Tc) 1.41W (Ta), 79W...
DataSheet: NVD4805NT4G datasheetNVD4805NT4G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V
Series: --
Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NVP4805NT4G is a N-channel MOSFET device developed by ON Semiconductor. It is suitable for applications such as power amplifier, automotive power control, lighting, and small signal control circuits. This device can operate in high-frequency switching mode and provides superior performance features.

Features:

  • Low on-state resistance (RDSON) for high efficiency
  • Excellent fast-switching performance
  • High dV/dt capability
  • Low-rated current for low power loss
  • 10 µs turn-on time for improved EMI performance

Application

NVP4805NT4G is suitable for numerous applications including power amplifier, automotive power control, lighting, and small signal control circuits. This device can be used in a variety of high-frequency switching applications as it exhibits superior performance features.

Working Principle

NVP4805NT4G is a MOSFET device. In simple terms, it is a switch that can turn on/off flow of signal with varying voltage. MOSFETs are voltage controlled devices with four terminals: gate, drain, source, and body. The two important parameters of a MOSFET are gate-source voltage (VGS) and drain-source voltage (VDS) The drain current (ID) of the MOSFET can be controlled by raising or lowering the gate voltage (VGS). When VGS is below the threshold voltage (VTH) of the MOSFET, the device is said to be in the off-state and no current flows through the drain-source channel. When VGS is increased beyond VTH, the device is said to be in the on-state and electrons will be able to flow through the channel, thus allowing current to flow in the drain-source channel.

Conclusion

The NVP4805NT4G is an advanced MOSFET device designed for power amplifier, automotive power control, lighting, and small signal control circuits. It features exceptional performance features with low on-state resistance, fast-switching performance and high dV/dt capability. The functioning principle behind the MOSFETs is that the capacitance between the gate and source terminals is varied with the application of a controlling voltage in order to alter the current flow from drain to source.

The specific data is subject to PDF, and the above content is for reference

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