Allicdata Part #: | NVD4805NT4G-ND |
Manufacturer Part#: |
NVD4805NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 88A DPAK |
More Detail: | N-Channel 30V 12.7A (Ta), 95A (Tc) 1.41W (Ta), 79W... |
DataSheet: | NVD4805NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.41W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2865pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 12.7A (Ta), 95A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NVP4805NT4G is a N-channel MOSFET device developed by ON Semiconductor. It is suitable for applications such as power amplifier, automotive power control, lighting, and small signal control circuits. This device can operate in high-frequency switching mode and provides superior performance features.
Features:
- Low on-state resistance (RDSON) for high efficiency
- Excellent fast-switching performance
- High dV/dt capability
- Low-rated current for low power loss
- 10 µs turn-on time for improved EMI performance
Application
NVP4805NT4G is suitable for numerous applications including power amplifier, automotive power control, lighting, and small signal control circuits. This device can be used in a variety of high-frequency switching applications as it exhibits superior performance features.
Working Principle
NVP4805NT4G is a MOSFET device. In simple terms, it is a switch that can turn on/off flow of signal with varying voltage. MOSFETs are voltage controlled devices with four terminals: gate, drain, source, and body. The two important parameters of a MOSFET are gate-source voltage (VGS) and drain-source voltage (VDS) The drain current (ID) of the MOSFET can be controlled by raising or lowering the gate voltage (VGS). When VGS is below the threshold voltage (VTH) of the MOSFET, the device is said to be in the off-state and no current flows through the drain-source channel. When VGS is increased beyond VTH, the device is said to be in the on-state and electrons will be able to flow through the channel, thus allowing current to flow in the drain-source channel.
Conclusion
The NVP4805NT4G is an advanced MOSFET device designed for power amplifier, automotive power control, lighting, and small signal control circuits. It features exceptional performance features with low on-state resistance, fast-switching performance and high dV/dt capability. The functioning principle behind the MOSFETs is that the capacitance between the gate and source terminals is varied with the application of a controlling voltage in order to alter the current flow from drain to source.
The specific data is subject to PDF, and the above content is for reference
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