NVD4809NHT4G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.3W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2155pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 11.5V
Series:	--
Rds On (Max) @ Id, Vgs:	9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 58A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NVD4809NHT4G is an advanced device designed with power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET). It is a high-frequency, high-power, Power MOSFET, and is mainly used in applications that require high power, high frequency, and low resistance, such as in telecommunications and automotive electronics. Such applications may include power supplies, resonant converters, inverters, and so on. This high-frequency Power MOSFET has been designed to offer superior power efficiency and is capable of operating at frequencies up to 500kHz. The device features an integrated dual-gate, high-voltage design, as well as high-speed, low on-resistance switching, which allows for maximum efficiency. The device includes an integrated overtemperature protection circuit, which helps ensure reliable and safe operation in high-temperature environments, as well as a low-dropout voltage. The NVD4809NHT4G is a single power MOSFET which is composed of three sections: the gate, the source and the drain. The gate acts as a switch for controlling current between the source and the drain. When a voltage is applied to the gate, a channel is formed and electron flow is allowed between the source and the drain, increasing the current and power transfer. Conversely, when the voltage on the gate is removed, the channel is eliminated and there is no current flow. The working principle of the NVD4809NHT4G is based on the electrostatic attraction and repulsion of the electrons. The gate acts as an electrostatic generator and creates an electric field which attracts electrons towards it. When a voltage source is connected to the gate, it further increases the electric field, which attracts electrons and forms a conductive region known as the “channel”. The electrons in this channel conduct current from the source to the drain as well as to the gate. The NVD4809NHT4G includes advanced features such as an overtemperature protection circuit which helps protect against overheating, as well as a low-dropout voltage. This feature reduces the current levels in the device when the input voltage drops in order to prevent damage to the device. This device is specially designed for high-frequency applications and includes a built in metal shield to help reduce unwanted radiation from other components.The NVD4809NHT4G is an advanced power MOSFET with integrated dual-gate, low on-resistance switching, an overtemperature protection circuit, and low-dropout voltage. It is designed for use in applications that require high-power and high-frequency switching. It is typically used in telecommunications and automotive electronics. The NVD4809NHT4G is a single power MOSFET device with two gate terminals, a source terminal and a drain terminal. When an electric field is applied to the gate terminal, electrons in the region between the gate and the source are allowed to flow, creating a channel and allowing current to flow from the source to the drain. The NVD4809NHT4G also includes advanced features such as an overtemperature protection circuit and a low-dropout voltage feature that protect the device from overheating and voltage drops. This device is ideal for use in high-frequency power applications.

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