NVD4856NT4G-VF01 Allicdata Electronics
Allicdata Part #:

NVD4856NT4G-VF01-ND

Manufacturer Part#:

NVD4856NT4G-VF01

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 89A DPAK
More Detail: N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W...
DataSheet: NVD4856NT4G-VF01 datasheetNVD4856NT4G-VF01 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.28198
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The NVD4856NT4G-VF01 belongs to the family of transistors, FETs and MOSFETs single. It is a Vishay Siliconix Smart High-Side Power Switch utilized for many automation and industrial control applications. It has a relatively low on-resistance which permits designs of highly efficient power supplies. The device also features integrated impedance network to prevent cross conduction, and a thermally enhanced lead free a X2SON (8L) package with a wide thermal pad for better heat dissipation.

The NVD4856NT4G-VF01, with an order code NVD4856NT4G-VF01, is the high-side switch integrated circuit. It is an 8‑lead VF01 package that can be used in an array of industrial control and automation applications. It is equipped with built-in high voltage switches with low RDS (on resistance). It has extremely low on-resistance which permits designs of highly efficient power supplies. Its high side output current is 8.0A.

The NVD4856NT4G-VF01 embraces a current limitation and mode protection circuitry to provide over current protection, load dump protection, and short-circuit protection. It is highly suitable for working with relays, lamps, small motors, and other load circuits which requires an overload protection and operational stability. The device ensures extremely low switching losses due to its small on-state resistance.

The working principle of the NVD4856NT4G-VF01 is based on the principle of metal-oxide-semiconductor field-effect transistors (MOSFET’s). MOSFETs are extensively used in all aspects of electronics, from power switching circuits, to amplifier circuits and are frequently used to turn power supplies on and off. The transistor comprises of three terminals, the source, the gate, and the drain. When a voltage is applied to the gate, this causes a current to flow between the source and the drain, allowing the current to switch between on and off states. This is used to control the current flow between the source and the drain.

The NVD4856NT4G-VF01 is suitable for medical applications and as a power switch. It is used to switch power to various medical devices, such as defibrillators, x-rays, and magnetic resonance imaging (MRI) machines. It is also used for HVAC applications and for power switching in a variety of industrial settings, including automation and industrial control. The device is widely used in power distribution, control systems, lighting, automotive, and household appliances.

The NVD4856NT4G-VF01 is a high side power switch integrated circuit. It has a low on-resistance and features an impedance network to avoid cross conduction. It is a 8-channel device designed for very low on-resistance and high power dissipating capability. Its low on-resistance allows designs of highly efficient power supplies. It is suitable for HVAC applications, medical devices, and automotive power switching. The device ensures high operational stability and low switching losses due to the low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

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