NVD4810NT4G-VF01

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The NVD4810NT4G-VF01 is a dual N-Channel MOSFET (metal oxide semiconductor field effect transistor) from ON Semiconductor. It has an on-state resistance of 0.48 ohm (maximum) and a threshold voltage of 1.4 V (maximum) at 4.5 A. The device also offers low gate charge, low input and low output capacitance, as well as fast switching speed and low power dissipation. All of these characteristics make this device an ideal choice for a wide range of applications.

Application Field

The NVD4810NT4G-VF01 is perfect for applications that require superior performance at high switching speeds and power dissipation. Such applications include motor and load control, power conversion (inverters, rectifiers and direct current-to-direct current (DC-DC) converters) power management, and general-purpose switching in consumer electronics, automotive, telecom and industrial applications.

It is also perfect for high-frequency switching applications, as it has an extremely low on-state resistance. The low impedance of this device makes it ideal for high-frequency power conversion applications, including Class D amplifiers, DC-DC converters and switching regulators, as well as consumer-grade power amplifiers in audio and video applications. Moreover, because of its low level of power dissipation, it is also suitable for use in high-temperature and high-power applications, such as welding power supplies.

Working Principle

The NVD4810NT4G-VF01 is a dual channel MOSFET, which means that it consists of two separate channels. Each channel consists of an n-type source terminal, a p-type drain terminal and a gate terminal. A voltage applied to the gate terminal causes a flow of current between the source and drain terminals, thereby switching the MOSFET “on”.

When the gate voltage is zero, the MOSFET is said to be in its “off state”, and no current can flow between the source and drain terminals. When the gate voltage is high enough to exceed the device\'s threshold voltage, the MOSFET is in its “on state”, and current can flow between the source and drain terminals.

The device\'s high switching speed and low power requirements are the result of its efficient design. The low gate charge, low input capacitance and low output capacitance help to reduce the overall power dissipation of the device, allowing for faster switching speeds and improved power efficiency.

The NVD4810NT4G-VF01 is a highly reliable device, as its low on-state resistance results in low power losses, even at high operating temperatures. Furthermore, its low gate charge allows for improved switching speeds and reduced power requirements. Finally, its high capacitance values lead to improved handleability and reliable operation at elevated temperatures.

Overall, the NVD4810NT4G-VF01 is the perfect choice for a wide range of applications due to its superior switching speed, high capacitance values and reliable operation at high temperatures. It is an ideal choice for motor control, power conversion, power management, and general-purpose switching in consumer electronics, automotive, telecom and industrial applications.

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