NVD4806NT4G-VF01 Allicdata Electronics

NVD4806NT4G-VF01 Discrete Semiconductor Products

Allicdata Part #:

NVD4806NT4G-VF01OSTR-ND

Manufacturer Part#:

NVD4806NT4G-VF01

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 76A DPAK
More Detail: N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W ...
DataSheet: NVD4806NT4G-VF01 datasheetNVD4806NT4G-VF01 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.26575
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The NVD4806NT4G-VF01 is a power MOSFET, especially popular in the fields of computers, servers, and other electronic products. It features low gate charge, a wide operating range in voltage, and a low RDSon of 12.1 mΩ. It is typical in a through-hole TO-220 package, making it extremely easy to use.

As a power MOSFET, the NVD4806NT4G-VF01 makes use of two distinct types of charge carriers to work. First, the drain and source contact is enabled by the use of electron flow controlled between the two terminals. At the same time, by controlling the voltage applied to the gate-source, hole flow is also enabled, making it possible to amplify the electric current.

Also, the NVD4806NT4G-VF01 features a wide operating range, making it ideal for many tasks. It is specifically designed for use in servers, computers, and other digital and analog applications. It offers a high operating temperature from -55 to +125°C, making it highly reliable and capable in that regard.

The NVD4806NT4G-VF01 also offers a very low gate charge of 27nC. This is important as it allows for better power efficiency, as the gate capacitance does not take up too much power. This also means that the device can be used for a variety of tasks, including those where power dissipation is critical.

Moreover, the NVD4806NT4G-VF01 has a low RDSon of 12.1 mΩ, meaning that it has a low resistance when using the device in a circuit. This makes it ideal for power transfer, as the low resistance allows for efficient power transfer without much waste. This is especially important for complex operations, such as those involving high-frequency switching.

Finally, the NVD4806NT4G-VF01 is an essential building block for many digital and analog applications. It is usually used to provide power to integrated circuits or other devices. Also, it can be used as a switching device for certain tasks, such as power-management and robust MP3 players.

In conclusion, the NVD4806NT4G-VF01 power MOSFET is a key component for modern computers, servers, and other electronic products. It features low gate charge, a wide operating range, and a low RDSon of 12.1 mΩ . It is small enough to fit in a TO-220 package, making it highly efficient and versatile. Thus, it is essential for many tasks within the digital and analog world.

The specific data is subject to PDF, and the above content is for reference

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