NVD4808NT4G

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The NVD4808NT4G is a single, high voltage Fast-switching N-Channel Enhancement-Mode Power MOSFET. With its 8.9A maximum continuous drain current, it can be most commonly found in battery powered applications. This is due to its low drain-source on-resistance of 0.45Ω, its ultra-low gate charge, and its high avalanche energy rating at 135mJ. A major selling point of this MOSFET is also its low input capacitance of 295pF, which makes it ideal for high-frequency applications. On top of all this, it also offers a 175V gate-source rating.

Being an enhancement-mode Power MOSFET, the NVD4808NT4G operates in such a way that drain current increases exponentially with increasing gate-source voltage. The way this is accomplished is by the metal-oxide compound between the gate and the source. The metal-oxide compound forms a depletion layer, and when a gate-source voltage is applied, electrons are pulled away from the conduction channel and make the depleting layer thinner. This reduces the resistance from source to drain, causing an increase in drain current. On the other hand, if no gate-source voltage is applied, then the depletion layer is thick, blocking the current and the drain-source resistance is large.

The NVD4808NT4G can be used in a variety of circuits, from half-bridge converters to DC-DC boost converters and many more. Its low input capacitance means it can be used in applications that demand high switching frequency, and its drain-source on-resistance, as well as its 175V gate-source rating, makes it ideal for high voltage applications. Being a fast-switching MOSFET, it can be used to switch high loads quickly, making it useful in power supplies and motor control applications.

In conclusion, the NVD4808NT4G is a reliable and versatile MOSFET that can be used in a variety of applications where high voltage, high current, and high switching frequency are required. Its low input capacitance, low drain-source on-resistance, and high avalanche energy rating make it perfect for battery-powered applications, where power and efficiency are of utmost importance.

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