NVD4810NT4G-TB01

Gate Charge (Qg) (Max) @ Vgs:	21nC @ 11.5V
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.4W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 12V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Rds On (Max) @ Id, Vgs:	10 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs

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The NVD4810NT4G-TB01 is one of the most commonly used MOSFETs in electronic circuits today. This type of transistor is capable of efficiently controlling large amounts of power in a wide variety of applications. This article will explain the application field and working principle of NVD4810NT4G-TB01.The NVD4810NT4G-TB01 is a single-channel MOSFET which is used primarily in engineering and industrial applications. This type of transistor is used in applications which involve the control of high voltages and currents such as switching power supplies, motor control, and lighting control. The NVD4810NT4G-TB01 has a lower on-resistance compared to other MOSFETs, which makes it well-suited for high-power applications.The working principle of the NVD4810NT4G-TB01 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor which has two input terminals called the gate and the source. The gate is where the control voltage is applied and the source is where the input signal is received. When a voltage is applied to the gate, the resistance between the drain and source decreases, allowing current to flow through the device.The NVD4810NT4G-TB01 has a high drain-to-source on-resistance of 10 milliohms, which makes it well-suited for high-power applications. It also has a low gate-source capacitance of 0.0012 Picofarads and a high breakdown voltage of 93 volts. This makes it ideal for switching power supplies, motor control, and lighting control.In addition, the NVD4810NT4G-TB01 has an added feature called “Parasitic Diode Protection” which protects the transistor from damage caused by excessive current. The parasitic diode protection works by clamping the control voltage when the power is switched off, preventing excessive current from flowing through the transistor and causing damage.In conclusion, the NVD4810NT4G-TB01 is an excellent choice for high-power applications due to its low on-resistance and high breakdown voltage. It is also highly reliable, as it has a protective feature which prevents damage caused by excessive current. The NVD4810NT4G-TB01 is the perfect choice for high-power applications requiring the efficient control of high voltages and currents.

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