PMN27XPEAX Allicdata Electronics
Allicdata Part #:

PMN27XPEAX-ND

Manufacturer Part#:

PMN27XPEAX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 20V 4.4A 6TSOP
More Detail: P-Channel 20V 4.4A (Ta) 530mW (Ta), 8.33W (Tc) Sur...
DataSheet: PMN27XPEAX datasheetPMN27XPEAX Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 4.5V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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PMN27XPEAX is a type of depletion mode field effect transistor (FET) that is fabricated on high resistance, low-cost silicon wafer substrate. It is commonly used as an analog switch or amplifier and is specifically designed for high-impedance input applications.

The PMN27XPEAX is a three-terminal device consisting of a source, gate and drain. The operation of the switch is based on the principle that when an electric field is applied to an area of the substrate (insulator material used in the FET), a change in the junction resistance occurs. By applying an appropriate voltage signal to the gate of the device, it will draw current from the source and the drain which connects in series. This current will cause the junction resistance to be reduced, thus resulting in the formation of a conducting channel between the source and drain.

PMN27XPEAX FETs are primarily used in applications requiring high-impedance input such as audio preamps, level shifters, and other signal processing stages. They are also useful in many digital circuits including multiplexers, delay elements, and analog-to-digital converters. PMN27XPEAX devices are also quite popular in radio frequency or microwave systems due to their high frequency and low capacitance characteristics.

The PMN27XPEAX has several advantages over other types of FETs. Firstly, it is relatively inexpensive compared to its counterparts. Additionally, it has a wide range of operating voltages (up to 40 volts), making it ideal for use in a variety of applications. Additionally, the PMN27XPEAX has low on-state resistance, resulting in low signal power losses. In addition, the FET has excellent linearity, making it suitable for high-quality audio and video applications. Finally, the device offers a high-impedance input, making it well-suited for RF applications.

One of the most appealing features of the PMN27XPEAX is its ability to operate at a very low maximum current (I_{MAX}) of about 0.2 mA. Due to its low power consumption, the device is highly efficient in low-voltage applications. In addition, the device has a fairly good high-frequency capability, which makes it suitable for use with analog and digital circuits.

In conclusion, the PMN27XPEAX is a cost-effective and low-power solution for high-impedance input applications. It offers excellent linearity and low input capacitance, as well as low on-state resistance. Additionally, it has a high operating voltage range, making it suitable for a variety of applications. Finally, the device is highly efficient due to its low maximum current.

The specific data is subject to PDF, and the above content is for reference

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