PMN23UN,165

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PMN23UN,165 is a single transistor type field effect transistor (FETs) belonging to the MOSFET family. It is a low voltage device with a drain to source voltage of up to 5 volts, a drain current of up to 0.25 Amperes, and an on-state resistance of as low as 3Ω. It has low gate threshold voltage, low ON-state resistance, and low ON-state current. It also features a low gate charge and fast switching speed.This transistor is well-suited for a variety of applications, particularly in high frequency switching circuits. It is highly rated for its capabilities when it comes to supplying power and dealing with sudden peak currents or voltages. Additionally, it is useful for regulating power circuits, such as power supplies and motor control circuits, as well as in audio applications. Its low on-state resistance makes it ideal for pulsed switching circuits, where immediate response is critical.The working principle of a PMN23UN,165 transistor is particularly simple. In an FET, an electric field is created when the gate voltage is applied. This electric field causes current to flow between the source and the drain. Since the field prevents acoustic vibrations from flowing freely, FETs are referred to as “silent transistors” since they are actually much quieter than their BJT counterparts. The PMN23UN,165 works by controlling the electric field across its gate-source junction, thus regulating the drain to source current.The PMN23UN,165 also features integrated protection features, such as built-in reverse polarity protection, self-resetting over-current protection, self-resetting overtemperature protection, and short-circuit protection. This makes it well-suited for applications where safety is a major concern.Overall, the PMN23UN,165 is a low voltage, low on-state resistance FET that is ideal for a variety of applications requiring fast switching. Its integrated protection features make it a safe and reliable choice for applications where fault protection is necessary.

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