Allicdata Part #: | 568-7418-2-ND |
Manufacturer Part#: |
PMN28UN,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 12V 5.7A 6TSOP |
More Detail: | N-Channel 12V 5.7A (Tc) 1.75W (Tc) Surface Mount 6... |
DataSheet: | PMN28UN,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.1nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMN28UN-135 is a type of metal oxide semiconductor field effect transistor (MOSFET), which belongs to the class of single-gate FETs. It is an enhancement-mode MOSFET, which behaves like an ideal switch when it is operated in saturation mode.
The PMN28UN-135 is commonly used in low-power switching applications, such as driving low-power transistors, DC-DC converters, relays, and optoisolators. It is typically used in applications which require low noise and high reliability, such as automotive electronics and lighting systems.
The PMN28UN-135 is particularly advantageous because of its low threshold voltage, which allows it to be used in low-power switching applications. This low threshold voltage also allows it to be operated with a gate voltage as low as 0.5V, meaning that it can be operated using a simple power supply.
When the gate voltage is increased, the drain-source current increases exponentially. This is due to the depletion layer, that forms beneath the gate when the gate voltage is greater than the threshold voltage. This depletion layer acts like a capacitor, and causes the drain-source current to increase exponentially with the gate voltage.
When the gate voltage is increased even further, the device enters saturation mode, where the drain-source current is limited only by the components of the circuit. When the device is in saturation mode, it behaves like an ideal switch, allowing current to flow until the supply voltage is cut off.
The PMN28UN-135 is also advantageous because it has a maximum drain-source voltage rating of 850 V, making it suitable for use in high-voltage applications. Additionally, it has a maximum operating temperature of 125°C, which allows it to be used in demanding environments.
In summary, the PMN28UN-135 is a single-gate enhancement-mode MOSFET, which is commonly used in low-power switching applications. It has a low threshold voltage, allowing it to be operated with a simple power supply. It has a high drain-source voltage rating, making it suitable for use in high-voltage applications, and a high operating temperature, allowing it to be used in demanding environments.
The specific data is subject to PDF, and the above content is for reference
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