PMN25EN,115

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The PMN25EN is a Type 2, N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) in the TO-220AB package. It has a drain current of 115A. Here, we look at its application field and working principle.

Application Field:
The PMN25EN can be used in switch mode power supply ICs, induction heating, solar inverter, and embedded control systems. It can also be used in power switch circuits, power amplifiers, H-bridge circuits, low-side switches, and low-voltage drives.

Working Principle:
The PMN25EN is composed of two layers of N-type semiconductors, with a metal oxide film acting as the gate as well as the insulator. This gate has a special property of having a high resistance for both voltage and current. This high resistance enables the PMN25EN to control the flow of current between its two N-type semiconductor layers.

When a voltage is applied to the gate, the gate “charges” by allowing an electric field between the two layers of N-type semiconductors, this in turn allows current to flow. This voltage can be varied to adjust the magnitude of the electric field and hence control the amount of current allowed to flow between the two N-type semiconductor layers.

Effect of Temperature on Working Principle:
The PMN25EN is temperature-sensitive, with some parameters such as gate threshold voltage and gate leakage current exhibiting variations with increasing temperatures. When operating at high temperatures, the gate threshold voltage decreases and gate leakage current increases. This will lead to an increase in the amount of current flowing through the PMN25EN.

Conclusion:
The PMN25EN is a Type 2, N-channel MOSFET in the TO-220AB package, offering a drain current of 115A. It is used in a wide range of applications including power supplies, power amplifiers, and H-bridge circuits. The working principle of the PMN25EN is based on controlling the flow of current between its two N-type semiconductor layers through the use of a voltage applied to the gate. The performance of the PMN25EN may be adversely affected by increased temperatures, leading to changes in gate threshold voltage and gate leakage current.

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