PMN22XN,115 Allicdata Electronics
Allicdata Part #:

568-10796-2-ND

Manufacturer Part#:

PMN22XN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 5.7A SC-74
More Detail: N-Channel 30V 5.7A (Ta) 545mW (Ta), 6.25W (Tc) Sur...
DataSheet: PMN22XN,115 datasheetPMN22XN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 545mW (Ta), 6.25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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In this article, we will be exploring the application field and working principle of the PMN22XN,115 transistor.This transistor is classified as a single FET (Field Effect Transistor) or MOSFET (Metal-oxide-semiconductor Field-Effect Transistor). A FET is a type of transistor that is used to control current flow on a single channel, allowing signals to be amplified with much greater precision and efficiency than other types of transistors.

The PMN22XN,115 is a digital transistor and is classified under the single FET/MOSFET type. As such, it is most often used in digital circuits and systems because its fast switching speed, low noise levels, and high channel density make it a great fit for this application.

The operation of a MOSFET transistor is quite simple and can be outlined using the following five steps.

Step 1: Gate Voltage – The first step is to apply a voltage to the gate of the MOSFET. This is done so that the gate will create an electric field around the channel, which will control the current flow through that channel.

Step 2: Current Flow – Once the gate voltage has been applied, current will begin to flow from the source to the drain, via the channel. This current is known as the ‘channel current’.

Step 3: Drain Voltage – The voltage at the drain can be controlled by adjusting the gate voltage. This is because the gate voltage will cause the electric field to become stronger or weaker, which will either increase or decrease the channel current respectively.

Step 4: Charge Carrier Inversion – When the gate voltage is increased, it creates a negative charge at the drain end of the channel. This causes the electrons and holes (charge carriers) to be inverted, meaning that they are now travelling in opposite directions.

Step 5: Switching Action – When the gate voltage is adjusted to the correct level, the charge carriers will be inversion and the current flow will be stopped. This is the basis of the MOSFET’s switching action which makes it very useful in digital circuits.

With its fast switching speed, low noise levels, and high channel density, the PMN22XN,115 makes an ideal single FET/MOSFET for digital circuit applications. It is also perfect for applications that require high levels of reliability and performance. The five steps outlined above demonstrate the basic operating principles of the MOSFET, which will help to ensure that it performs as expected in whatever application it is used in.

The specific data is subject to PDF, and the above content is for reference

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