Allicdata Part #: | 568-8416-2-ND |
Manufacturer Part#: |
PMN20EN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 6TSOP |
More Detail: | N-Channel 30V 6.7A (Tj) 545mW (Ta) Surface Mount 6... |
DataSheet: | PMN20EN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 545mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tj) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMN20EN,115 is part of a range of transistors consisting of field effects transistors (FETs) and metal oxide semiconductor field effect transistors (MOSFETs) single. This range is designed specifically for use in hot switching applications and is capable of handling very high current in small power, frequency and voltage ranges giving a very wide range of application possibilities.
Field effect transistors are primarily three-terminal devices with two input voltages and a current output when activated. The function of a FET is similar to that of a transistor except the action takes place when the electric field produced between the two input terminals creates a drain-source channel in the semiconductor substrate. The FET can then be used to regulate the current and power requirements of the circuit.
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are similar to field effect transistors in principle and operate with two electric fields; one field creates a depletion region between the source and drain, the other creates a channel between the input and output terminals. The result is that a very small amount of current is required to turn on a MOSFET, making it ideal for high frequency applications.
The PMN20EN,115 is a MOSFET especially designed for hot switching applications where a very high current capacity is needed. This can be used in audio amplifier, motor-drive and similar circuits where high frequencies, short switching times and high currents are encountered. The low on-state resistance of the PMN20EN,115 makes it an especially reliable device for these applications.
The most important parameters to consider when using the PMN20EN,115 for hot switching applications include the maximum voltage and current ratings, the on-state resistance, the switching time between on and off, the maximum operating temperature and the safe operating temperature for proper operation.
In summary, the PMN20EN,115 is a field effect transistor (FET) and metal oxide semiconductor field effect transistor (MOSFET) single, which is particularly well suited for hot switching applications. It has a wide range of application possibilities due to its ability to handle very high current in small power, frequency and voltage ranges. The most important parameters to consider when using the PMN20EN,115 include the maximum voltage and current ratings, the on-state resistance, the switching time between on and off, the maximum operating temperature and the safe operating temperature.
The specific data is subject to PDF, and the above content is for reference
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