
Allicdata Part #: | 568-7417-2-ND |
Manufacturer Part#: |
PMN27UN,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 5.7A 6TSOP |
More Detail: | N-Channel 20V 5.7A (Tc) 1.75W (Tc) Surface Mount 6... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMN27UN, 135 is a type of field effect transistor (FET) fabricated by Toshiba in a single-gate package. It is manufactured using a high voltage process technology, and is designed for high frequency power switching applications. The PMN27UN, 135 has become very popular in a variety of industrial, commercial, and consumer products, including automotive and computer systems.
A FET is a type of transistor that uses an electric field (rather than a current) to modulate the conductivity of a semi-conductor material. It is the most commonly used type of transistor due to its high efficiency and low power consumption. The PMN27UN, 135 is a type of MOSFET (Metal-Oxide Semiconductor FET), which is designed specifically for power switching applications. The basic structure of a MOSFET consists of two source-drain electrodes separated by an oxide layer, which acts as an insulator.
The PMN27UN, 135 has several distinct characteristics that make it suitable for power switching applications. For one, it has very low on-resistance, meaning that it can efficiently switch higher currents without experiencing significant power losses. Additionally, the PMN27UN, 135 has an exceptionally fast switching speed, allowing it to operate with very short on/off times. The combination of these characteristics makes the PMN27UN, 135 ideal for applications that require high-speed, high-duty-cycle power switching, such as high-frequency switching supplies, motor drives and voltage regulators.
The PMN27UN, 135 is also notable for its ability to withstand higher temperatures, as well as its large current carrying capability. This is especially important for applications in which the transistor must operate for long periods of time. Thanks to its small package size, the PMN27UN, 135 is ideal for use in devices with limited space, such as mobile phones and portable computers.
The PMN27UN, 135 is an excellent example of a modern power switching transistor. It combines several desirable characteristics, such as low on-resistance, high-speed switching, temperature robustness, and large current carrying capability. These features make the PMN27UN, 135 well suited for a variety of power switching applications, and it has become a popular choice for use in a wide range of automotive, industrial, and consumer products.
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