PMV100ENEAR Allicdata Electronics

PMV100ENEAR Discrete Semiconductor Products

Allicdata Part #:

1727-2524-2-ND

Manufacturer Part#:

PMV100ENEAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V TO-236AB
More Detail: N-Channel 30V 3A (Ta) 460mW (Ta), 4.5W (Tc) Surfac...
DataSheet: PMV100ENEAR datasheetPMV100ENEAR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 72 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMV100ENEAR Application Field and Working Principle

The PMV100ENEAR is a kind of high-performance power MOSFET for high-current applications, designed for use in systems up to 100A. This MOSFET is designed with SiC power, extremely low Rds(on) and advanced packaging technologies, providing superior electrical and mechanical characteristics. The PMV100ENEAR can be used in bidirectional blocking applications, such as rectifiers and DC/DC converters, and uses a single, simple driving configuration.

Application Field

The PMV100ENEAR is designed to be highly efficient and suitable for use in a multitude of applications, such as switching and power supply in telecom, automotive, industrial applications.

  • Telecom: Telecom systems power supplies
  • Automotive: Battery-powered applications, Inverters, chargers, timing applications, DC/DC converters
  • Industrial: PFC (power factor control) applications, IGBT Drivers, Switching applications

Working Principle

PMV100ENEAR MOSFET is an enhancement mode MOSFET, which switches between two different states – accommodates conducting current to be passed through it, or blocks current flow. This process is achieved by controlling the gate of the MOSFET. When the voltage is applied between the gate and the source of the device, the gate charges up and increases the width of the depletion region. A large current path is then created between the drain and source and the device begins conducting.

When the voltage is removed, the depletion region ends up shrinking and blocking the flow of current. In this MOSFET, the gate is driven by a single configuration, eliminating the need for complex circuitry. This also helps reduce power dissipation and simplifying the design process. Additionally, its robust construction ensures that it’s less susceptible to reactions from the environment.

Conclusion

PMV100ENEAR is a high-performance MOSFET designed for high-current applications. It has a low Rds(on) and is designed with SiC power and advanced packaging technologies, making it suitable for a multitude of applications. Additionally, it operates on a single, simple driving configuration and is robustly built, making it less likely to suffer degradation from external factors.

The specific data is subject to PDF, and the above content is for reference

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