PMV117EN,215 Discrete Semiconductor Products

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The PMV117EN,215 is an enhancement-mode vertical DMOS FET for frequency conversion in applications such as switching regulators and resonant converters. This vertical DMOS FET is a high efficiency, low RDS(on), 0.5A, 600V device which is designed for current sharing and free-wheeling of high frequency inverters and converters in applications operating up to 500kHz. It has ESD protection up to 2kV.

The device is available in TO-263 and TO-220 packages. The TO-263 package has an additional backside ground contact to optimize the thermal performance. The PMV117EN,215 has a variety of features that make it suitable for different applications. Its low threshold voltage and low on-resistance make it ideal for low voltage applications. Additionally, the device has an on-resistance which is approximately two times lower than that of traditional MOSFETs.

The device utilizes a special gate structure which allows a very high current level to be driven in a very small amount of area. This results in a low on-resistance value and fast switching speeds. The combination of the vertical structure, low on-resistance, and fast switching speeds, make the PMV117EN,215 ideal for high frequency and switching applications.

The main application for the PMV117EN,215 is in power management and control for industrial applications such as motor control. The device can also be used in solar inverters and power factor correction (PFC) converters. The low on-resistance makes it an ideal device for current sharing applications. The device is also suitable for the implementation of adaptive snubbers and active voltage clamping (AVC) circuits.

The device can also be used in charge pumps and voltage boost converters in mobile phone and portable multimedia player applications. Its low threshold voltage, low on-resistance, and fast switching speeds also make it suitable for automotive applications such as headlamp ballast and illumination control. The device also has standby current blocking and is suitable for low-EMI applications.

The operating principle of the PMV117EN,215 involves driving current through the gate of the FET. This, in turn, activates the vertical DMOS structure which switches on the device. The threshold voltage required to switch on the device is very low, which is beneficial for low voltage applications. When the gate voltage is removed, the vertical DMOS structure switches off the device, resulting in a very low on-resistance. The combination of the low gate voltage and low on-resistance make the PMV117EN,215 an ideal device for high frequency switching applications.

In conclusion, the PMV117EN,215 vertical DMOS FET is designed for high frequency switching applications. It is suitable for industrial applications such as motor control, solar inverters, and power factor correction converters. Additionally, it is suitable for automotive applications such as headlamp ballast and illumination control. The combination of its low threshold voltage, low on-resistance, and fast switching speeds makes the PMV117EN,215 an ideal device for high frequency and switching applications.

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