PMV16XNR Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2300-2-ND |
Manufacturer Part#: |
PMV16XNR |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V SOT23 |
More Detail: | N-Channel 20V 6.8A (Ta) 510mW (Ta), 6.94W (Tc) Sur... |
DataSheet: | PMV16XNR Datasheet/PDF |
Quantity: | 27000 |
3000 +: | $ 0.07760 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.8A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.2nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 510mW (Ta), 6.94W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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What is PMV16XNR?
PMV16XNR is a single polarity metal-oxide-semiconductor field-effect transistor (MOSFET) that\'s intended for high voltage, high current applications. It\'s made with a drain-source breakdown voltage, VDSS, of 1600V, and a continuous drain current of 16A, for an incredibly powerful field effect transistor. PMV16XNR also has very fast switching times, turning on in just 750ns and turning off in only 1000ns, making it ideal for high-frequency power control applications. In fact, this MOSFET can handle quite a bit of power, up to 202W.
PMV16XNR Application Field and Working Principle
The PMV16XNR single polarity MOSFET has a wide range of uses, including motor control and power switching for push-pull circuit, multi-level inverters, half-bridge drivers, and other power control applications at high frequencies. It can also be used for switching applications, such as keyboards and relays. Along with that, it can be used in a variety of industrial applications, such as factory automation and battery management.
The working principle of the PMV16XNR is based on a MOSFET. A MOSFET is a transistor, like a bipolar junction transistor (BJT). The main difference between a BJT and a MOSFET is that the MOSFET works based on the capacitance between the gate and the drain. An electric field formed within this capacitance controls the current flowing between the source and the drain. The voltages of the source, gate and drain has different roles during the operation of this transistor. First, the gate voltage must be higher than the source voltage to turn-on the transistor and then the drain must be potentiated with a higher voltage than the gate to turn-off the transistor.
The PMV16XNR is designed specifically to provide high drain-source breakdown voltage and fast switching speeds. Its two-pin package consists of a source and a drain, meaning that the gate voltage is supplied from an external source. This MOSFET has a VDSS rating of 1600V and a continuous drain current rating of 16A, which makes it highly reliable when used in harsh conditions. It can handle large amounts of power, up to 202W, and features incredibly fast switching speeds, with turn-on times of just 750ns and turn-off times of 1000ns. PMV16XNR also has a low gate-source ON-Resistance RDS(on) of only 0.077Ω at 10V gate-source voltage.
Conclusion
PMV16XNR is a single polarity MOSFET that\'s designed for high voltage, high current, and high power applications. Its fast switching speeds, combined with its high VDSR and high current ratings, make it ideal for power control, keyboards, relays, and other industrial applications. It has a drain-source breakdown voltage of 1600V and a low RDS(on) of 0.077Ω, making it highly reliable in harsh environments. It also can handle high amounts of power, up to 202W.
The specific data is subject to PDF, and the above content is for reference
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