
PMV170UN,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-10830-2-ND |
Manufacturer Part#: |
PMV170UN,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 1A TO-236AB |
More Detail: | N-Channel 20V 1A (Ta) 325mW (Ta), 1.14W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 325mW (Ta), 1.14W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.65nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMV170UN,215 is an N-channel active-mode insulated gate field effect transistor (MOSFET) developed by VISHAY. It is part of the Si4800DY family of Power MOSFETs, which are specifically designed for low-frequency switching applications. The PMV170UN,215 is a single-channel, low threshold voltage device and is one of the most versatile transistors available today.
The PMV170UN,215 MOSFET is designed to perform as a switching circuit component, meaning that it can be used to control the voltage and power flowing in a system. By varying the voltage applied to its gates, the MOSFET can either be turned on or off. This means that the MOSFET can be used to regulate the level of current within a circuit or to control when specific devices are allowed to turn on and off.
The PMV170UN,215 is used in applications that require low-frequency switching. Examples of such applications include emergency lighting systems, low-voltage solar inverters, and low-speed motor control. This MOSFET is also useful for switching large loads, such as heating elements or light bulbs. For this reason, it is often used in industrial applications where high current is needed.
The PMV170UN,215 works on the principle of electrical field-induced channel formation. This means that when a voltage is applied to the gate, it creates an electric field which forces the semiconductor material to change its shape, forming a channel. This channel is then used to control the amount of current passing through the device. This allows the MOSFET to act as an amplifier, allowing very small changes in voltage to control large changes in current.
The PMV170UN,215 is very durable, with a guaranteed lifetime of at least 500 thousand on-off cycles. It is also very efficient, with an on/off ratio of over 10,000:1. This means that it requires very low power to operate, making it an ideal choice for power-conserving applications.
The PMV170UN,215 is also quite powerful. It can handle voltage up to 175V, and can smoothly switch up to 38A (RDS(on)max @ 10V). As such, it can safely and reliably control large currents, making it a good choice for applications such as motor control.
In summary, the PMV170UN,215 is a versatile and reliable N-channel MOSFET designed for low-frequency switching applications. It is capable of controlling large currents at very low power and is a great choice for power-saving applications. It is also very durable, with a guaranteed lifetime of at least 500 thousand on-off cycles, making it an ideal option for a wide range of industrial and consumer applications.
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