PMV130ENEAR

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	460mW (Ta), 5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	170pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	120 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.1A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMV130ENEAR Application Field and Working Principle

PMV130ENEAR is a two terminal single FET transistor with common source, common drain and common gate connection structures for applications such as switching, interfaces and amplifiers. This device is designed for a wide range of applications between sub-micron CMOS and high side DMOS so that its structure provides low saturation voltage, high switching frequency, and high breakdown voltage. Additionally, this device offers improved operation of capacitive loads, improved temperature stability and low gate source impedance.

Starting with the application field, this transistors are typically suited for power applications such as audio amplifiers, radio frequency-power amplifiers, and broadcast power supplies. PMV130ENEAR transistors are often used as devices in power management systems, since they provide excellent voltage regulation, fast response time, and low power consumption.

Furthermore, this type of device is useful for powering small-signal audio components such as tweeters, woofers, line level amplifiers, and more. As these components are sensitive to input pressure and consumption, it is important to use a low-power device like the PMV130ENEAR. Additionally, this device is regularly used in low-voltage power circuits, like those in consumer electronics and other applications where power is required with minimum power consumption.

The template of this transistor is often used for higher current and higher voltage applications, as well. This means the production of powerful chips such as motor controllers, LCD controllers, and inverters can be powered by it. Similarly, the device can be used as power amplifiers for digital equipment, charging devices, and DC/DC converters. In fact, it can be used in any application which requires reliable, high-voltage and high-power switching or amplifying.

When it comes to the working principle and construction of the device, it has a simple construction which includes three terminals, namely the source, drain, and gate. The source is the input side of the device and the drain is the output end. The gate is responsible for controlling the amount of current passing through the device. When the gate is left open, there is no current passing through it. When it is closed, current flows from the source to the drain.

The PMV130ENEAR works on a principle of charge control which is a simple concept where both electrons and holes are produced and their movement is controlled. The electron and hole carriers move to the appropriate positions affected by a voltage applied to the gate terminal. Depending on the voltage applied, the carriers stay shorted or rise from the junction, resulting in switching the current. These electrons and holes inside the channel are responsible for the current flow between the source and the drain. This is what makes this device an excellent choice for high-voltage, high-power applications.

In conclusion, the PMV130ENEAR is a popular two-terminal transistor that serves many purposes, ranging from low-power audio devices to high-power voltage regulation and switching. Its excellent features include high switching frequency, low saturation voltage, improved temperature stability, and low gate source impedance, which makes it a great choice for many applications. Furthermore, its working principle of charge control further adds to its effectiveness.

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