| Allicdata Part #: | 1727-2525-2-ND |
| Manufacturer Part#: |
PMV120ENEAR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 60V TO-236AB |
| More Detail: | N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surf... |
| DataSheet: |  PMV120ENEAR Datasheet/PDF |
| Quantity: | 6000 |
| Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | TO-236AB (SOT23) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 513mW (Ta), 6.4W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 10V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 123 mOhm @ 2.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The PMV120ENEAR is a high-performance and scalable monolithic power MOSFET device developed by Fairchild semiconductor specifically for automotive and high-end industrial applications. This device is a single field-effect transistor (FET) with a maximum drain-source voltage of 12V and an operating temperature range of -55℃ to +150℃.
The PMV120ENEAR is made of silicon epitaxial MOSFET technology. Its remarkable breakdown voltage, current capacity and energy efficiency are among the highest in the industry. Even at elevated temperatures, the device delivers superior performance when compared to other FETs of similar specifications. Thanks to its impressive characteristics, the PMV120ENEAR is used in a wide range of applications like cell-phone chargers, portable electronics, automotive starters, camcorder batteries and more.
The working principle of the PMV120ENEAR is quite simple. The device uses two different operating voltages to work. One is the gate voltage, which controls the device\'s conduction. The other voltage, known as the body voltage, determines the device\'s capacitance. By altering these two voltages, the PMV120ENEAR can be configured to perform certain tasks. For example, it can be used as a digital-signal-controlled switch or an amplifier.
The PMV120ENEAR also has very solid construction and is ready to withstand harsh environments. Its package is designed for maximum thermal dissipating and its gate oxide is formed from ultra-thin layers, making it reliable and robust. All in all, the PMV120ENEAR is one of the most versatile and powerful FETs available in the market today.
In conclusion, the PMV120ENEAR is an incredibly advanced and reliable MOSFET single FET device. Thanks to its high-end silicon technology, it offers the highest performance in a wide range of applications. Furthermore, it is robust and durable enough to withstand harsh environments, making it the ideal choice for automotive, high-end industrial, cell-phone chargers, portable electronics, and many other applications.
The specific data is subject to PDF, and the above content is for reference
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