Allicdata Part #: | 568-7533-2-ND |
Manufacturer Part#: |
PMV16UN,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 5.8A SOT23 |
More Detail: | N-Channel 20V 5.8A (Ta) 510mW (Ta) Surface Mount T... |
DataSheet: | PMV16UN,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 5.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A PMV16UN215 is a part of STMicroelectronics transistor series. This type of transistor is a high voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor), designed for applications requiring high efficiency, low on-state resistance and fast switching times. It is a single-channel enhancement type device, which operates in enhancement mode and is suitable for power switching applications.
The PMV16UN215 is a silicon-based semiconductor device with a special gate oxide layer which forms an insulated gate. This layer is used to control the flow of current through the semiconductor material by creating an electric field. When a voltage is applied to the gate, an electric field is created which will alter the properties of the material the gate is in contact with. In this case, the electric field created by the gate will modulate the resistance of the material underneath, thereby controlling the amount of current that flows through it.
The PMV16UN215 is a highly efficient MOSFET, capable of handling high power levels and operating at high-frequency switching speeds. It also has excellent breakdown characteristics and low gate-source capacitance. The device can handle currents up to 200 mA and its operating voltage range from 4V to 40V. It has a low on-state resistance of only 0.347Ω and a maximum power dissipation of 175W.
The PMV16UN215 is a highly reliable and versatile MOSFET, suitable for a variety of applications. Its low on-state resistance makes it well suited for high frequency switching applications, while its high efficiency makes it ideal for low voltage power switching and digital logic applications. Its low gate-source capacitance makes it a great choice for switching applications with high rise times and fast switching speeds. It is also commonly used in motor control applications and motor drivers, as well as DC-DC converters and pulse width modulation (PWM) circuits.
The PMV16UN215 is an efficient and reliable MOSFET device and it can be used in a variety of applications requiring high efficiency and low on-state resistance. It is a single-channel transistor and it is designed to operate in enhancement mode, providing high switching speeds, low gate-source capacitance, and reliable operations. This transistor is suitable for a variety of power switching applications and can handle large currents and voltages, making it a great choice for a variety of industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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