PMV30UN2VL

Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	490mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	655pF @ 10V
Vgs (Max):	±12V
Series:	TrenchMOS™
Vgs(th) (Max) @ Id:	900mV @ 250µA
Rds On (Max) @ Id, Vgs:	32 mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5.4A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction to PMV30UN2VL application field and working principle

The PMV30UN2VL is a type of field-effect transistor (FET) that is commonly used in modern electrical and electronic circuits. It was first introduced to the market in the early 2000s and has since become a popular choice for many types of applications.

What is a FET?

In a basic sense, a FET is a type of transistor which is able to control the flow of electrical current between two terminals by using an electric field to switch the conductivity of the device. FETs are important components of modern circuit design, as they allow for more efficient control of current and voltage than can be achieved with bipolar junction transistors (BJTs).

PMV30UN2VL Characteristics

The PMV30UN2VL is a single-gate FET with a maximum drain-source voltage of 30 volts. It has an on-state resistance of 3 ohms, a breakdown voltage of 100 volts, and a maximum power dissipation of 0.75 watts. It is also designed to operate in temperatures ranging from -55 to +150 degrees Celsius, making it well suited for use in extreme environmental conditions.

Applications of the PMV30UN2VL

The PMV30UN2VL is well suited for use in a wide variety of applications, including high-side and low-side switching, logic-level control, power management, and motor control. Because of its low on-state resistance and high breakdown voltage, the PMV30UN2VL is particularly well suited for use in motor controllers and switching power supplies, where it can provide the necessary control and protection for these types of applications.

Working Principle of the PMV30UN2VL

The PMV30UN2VL is able to control the flow of electrical current between its source and drain terminals by means of an electric field. When a positive voltage is applied to the gate terminal of the FET, the electric field generated by the gate will modify the channel created between the source and drain terminals, allowing electric current to flow. By varying the voltage applied to the gate terminal, the current flow through the FET can be adjusted.

Conclusion

The PMV30UN2VL is a single-gate FET with a maximum drain-source voltage of 30 volts and a breakdown voltage of 100 volts. It is well suited for use in a wide variety of applications, such as high-side and low-side switching, logic-level control, power management, and motor control. The device is able to control the flow of electrical current between its source and drain terminals by means of an electric field, making it a versatile choice for many different types of circuit designs.

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