Allicdata Part #: | 1727-1153-2-ND |
Manufacturer Part#: |
PMV32UP,215 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 4A SOT-23 |
More Detail: | P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-... |
DataSheet: | PMV32UP,215 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.14935 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1890pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 15.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMV32UP,215 is an enhancement-mode enhancement-type Field Effect Transistor (FET) commonly used in high voltage switching applications. It is widely used in automotive, motor control and lighting industries. This FET has a low saturation voltage and excellent current handling capabilities. The PMV32UP,215 is a single die device with an oxide oxide layer and a SiGe epitaxial layered structure.
The PMV32UP,215 consists of a source, gate, drain, and internal substrate. The source and the gate are electrically connected and the drain is electrically isolated from the source and gate. The substrate acts as the bottom layer which provides mechanical support for the device. The oxide oxide layer is a thin layer of insulating material that separates the source, gate, and drain from the substrate. This oxide layer reduces the amount of switching current required for device operation.
The basic working principle of a FET is based on the principle of electro-static or electron-transfer. The source-gate voltage is applied to the FET. When a voltage is applied, a small electric field is created, and this electric field produces a current between the source and the drain. This current flows through the channel and the output voltage is therefore determined by the input voltage.
The PMV32UP,215 is particularly useful in high voltage switching applications due to its low saturation voltage and high current handling capabilities. As such, it is often used in automotive, motor control and lighting industries. The device is capable of switching high voltage levels with high power, thus achieving a high speed switching operation. It is also used as a power switch in various electronic circuits, including low power SMPS (Switch Mode Power Supply), DC-DC converters, and power semiconductor integrated circuits.
The PMV32UP,215 features a wide range of features such as fast switching time, enhanced reliability, low on-resistance, high off-voltages, integrated gate protection, and low thermal resistance. It has a low gate capacitance which is beneficial in high frequency switching applications. The device also has a low input capacitance, making it suitable for high power operation. In addition, the device is temperature-stable, meaning it operates at high temperature without any adverse effects.
The PMV32UP,215 offers excellent performance in high voltage switching applications. Its low gate and input capacitance allows for high switching speeds, while its low on-resistance and high off-voltage provides flexibility for applications. The integrated gate protection ensures reliable operation and protection from overvoltage spikes. Further, its low thermal resistance ensures high reliability, ensuring the device can operate in high-temperature environments and without any negative effects.
In conclusion, the PMV32UP,215 is an excellent choice for high voltage switching applications due to its low saturation voltage, high current handling capabilities, low gate and input capacitance, and excellent performance profile. As such, the device is widely used in automotive, motor control, and lighting industries. Its fast switching time, enhanced reliability, low thermal resistance, and integrated gate protection are just some of its features that make it an ideal choice for high voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PMV30XN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 3.2A SOT-... |
PMV37EN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 3.1A SOT-... |
PMV31XN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 5.9A SOT-... |
PMV30UN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 5.7A SOT-... |
PMV32UP/MIR | Nexperia USA... | 0.0 $ | 1000 | SMALL SIGNAL MOSFETP-Chan... |
PMV30UN2VL | Nexperia USA... | 0.07 $ | 1000 | MOSFET N-CH 20V 5.4A TO23... |
PMV37EN2R | Nexperia USA... | -- | 36000 | MOSFET N-CH 30V SOT23N-Ch... |
PMV33UPE,215 | Nexperia USA... | 0.16 $ | 9000 | MOSFET P-CH 20V 4.4A TO-2... |
PMV35EPER | Nexperia USA... | -- | 1000 | MOSFET P-CH 30V 5.3A TO23... |
PMV30UN2R | Nexperia USA... | 0.09 $ | 90000 | MOSFET N-CH 20V SOT23N-Ch... |
PMV30XPEAR | Nexperia USA... | -- | 54000 | MOSFET P-CH 20V TO-236ABP... |
PMV32UP,215 | Nexperia USA... | 0.16 $ | 3000 | MOSFET P-CH 20V 4A SOT-23... |
PMV3036GY | Hammond Manu... | 22.52 $ | 1000 | POLE MOUNT KIT PMK SERIES |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...