PMV31XN,215

Vgs(th) (Max) @ Id:	1.5V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	280mW (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	410pF @ 20V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	5.8nC @ 4.5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	37 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5.9A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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PMV31XN,215 application field and working principle

PMV31XN,215 is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which is used in a variety of electronic applications such as switching, voltage enhancements, control of power electronics, and communications systems. This type of MOSFET is used in applications such as power supplies, RGB (Red-Green-Blue) video signals, amplifiers and switching regulators, among many more. The use of the MOSFET can be divided into three main categories according to application: analog, digital and switching applications.Analog applications are those which require a low-distortion response as well as low noise. Examples of this application are audio power amplifiers, television receivers and communication systems. The PMV31XN,215 is suitable for rapidly switching high and low voltages in this application field, as well as providing high-quality sound output.The digital applications are those which use the digital signals such as PWM (Pulse Width Modulation) and I2C (Inter-Integrated Circuit) and digital common interfaces. The PMV31XN,215 can be used to rapidly switch high and low voltages, as well as providing accurate PWM control and clock signals for digital integrated circuits.Finally, switching applications are those which require a high-speed switching rate and low power consumption. Examples of these applications are the switching of power supplies for personal computers, the control of DC motors, and driving an RF power amplifier. The PMV31XN,215 is suitable for these applications due to its low on-resistance and high-speed switching times.Now that we have an understanding of the application fields of the PMV31XN,215, we will now discuss how this device works. The PMV31XN,215 is a type of MOSFET that is composed of two layers of semiconductor materials, which are both silicon. The structure is similar to a capacitor, with the drain being the negative electrode and the source being the positive one. When a voltage is applied to the gate, it causes an electric field to form between the two materials, and the gate can be opened when enough voltage is applied.The current flowing through the device is controlled by the voltage that is applied to the gate. When a small voltage is applied to the gate, the channel will be open and a high current will flow. When a large voltage is applied to the gate, the channel will be closed and no current will flow. This is known as being “fully enhanced”, and allows for more accurate control over the current flow.In conclusion, the PMV31XN,215 is a type of MOSFET which can be used in a variety of electronic applications. It can be used in analog, digital and switching applications, and its main advantage is its low on-resistance and high speed switching time. It works by creating an electric field between two layers of silicon when a voltage is applied to the gate, allowing it to open and close rapidly. By understanding the application fields and operation of the PMV31XN,215, it can be used effectively in many different applications.

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