PMV30XN,215

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	380mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	420pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	35 mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Today, the wide applications of transistors in consumer electronics, automation and computing is widely known. However, the recent addition to the family of transistors, the PMV30XN,215 based on a Field Effect Transistor (FET) has been making waves in the semiconductor and electrical engineering industry due to its unique characteristics. This article will discuss the application field and working principle of this transistor, how it differs from other general transistors and why it is so popular. The PMV30XN,215 is a Field Effect Transistor (FET) that can be used in a number of applications including power conversion, analog-to-digital conversion, high-speed switching and level shifting. A key characteristic of FETs is that they can be operated at much lower power levels than their counterparts, the Bipolar Junction Transistors (BJTs). This makes them ideal for low-power and low-cost applications. Additionally, FETs have a much higher frequency response compared to BJTs which allows them to operate at significantly higher speeds.The PMV30XN,215 has a wide voltage range and high current-handling capacity. It has an ultra-low on-resistance of 0.001Ohm and a high input impedance, making it very suitable for switching applications. In terms of performance, the PMV30XN,215 can handle up to 28V and 10A and is capable of fast switching speeds, with a maximum oscillation frequency of up to 200 MHz.In terms of its working principle, the PMV30XN,215 is based on the N-channel depletion-mode FET structure. It includes an n-type source, a n-type drain, a p-type substrate, and a gate formed between the source and drain. When the gate voltage is made negative, the electrons in the source and drain regions are attracted to the gate, which creates an inversion layer. This inversion layer is a thin layer of n-type material that allows current to flow from the source to the drain. The PMV30XN,215 is an excellent choice for high-frequency, high-current applications, such as motor control, high-speed logic circuits, switching power supplies, DC-DC converters, and other power management and control applications. Due to its low on-resistance, high current-handling capacity, wide voltage range, and high switching speeds, the PMV30XN,215 has become a popular choice for many applications. Its N-channel depletion-mode structure makes it a versatile device for use in a variety of power conversion, analog-to-digital, and level shifting applications. As it offers excellent performance and reliability, it can be used in a wide range of applications and is expected to become even more popular in the near future.

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