Allicdata Part #: | 1727-2306-2-ND |
Manufacturer Part#: |
PMV37EN2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V SOT23 |
More Detail: | N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surfac... |
DataSheet: | PMV37EN2R Datasheet/PDF |
Quantity: | 36000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 209pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMV37EN2R is a single P-channel Enhancement Mode MOSFET developed by STMicroelectronics. As one of the most advanced devices of its kind, PMV37EN2R is designed, manufactured and qualified according to high-reliability automotive standards. This MOSFET’s small profile and low gate drive requirements enable it to be used in a wide range of automotive applications, such as powertrain, lighting, and security.
PMV37EN2R is a Power MOSFET with a high dV/dt capability, excellent gate charge characteristics and a low on-resistance. It is also 100% avalanche tested to ensure reliable operation that has no thermal runaway risk. The device has a wide Drain-Source voltage range from 12V to 200V, and a continuous Drain current up to 9A. It’s a perfect choice for switching applications that require low on-state resistance and high efficiency.
The device features excellent body diode characteristics due to its extremely high di/dt capability. This makes it suitable for high-frequency switching, providing fast response times and high efficiency. The PMV37EN2R also has a low reverse recovery time, and a low gate drive power requirement, making it ideal for use in a wide range of applications where space is limited.
PMV37EN2R is designed to be compatible with low-Voltage Logic (LV-ICs), which reduce the cost and increase the efficiency of power MOSFETs by reducing their gate drive power requirements. This allows the device to be used in applications where the cost of LV-ICs is attractive, while still retaining the high-frequency response characteristics and efficiency of power MOSFETs. In addition, PMV37EN2R can be easily controlled with logic level signals.
PMV37EN2R is an enhancement mode MOSFET, meaning it has a low resistance when turned on and a high resistance when turned off. It works by allowing electrical current to flow from the Drain to the Source when a voltage is applied to the Gate. When the Gate voltage is reversed, the reverse biased P-N junction prevents current from flowing. This allows the user to easily control the flow of electrical current, making it perfect for use in switching applications.
PMV37EN2R is manufactured with a wide variety of packages to suit different applications. It also has a wide range of features and parameters to suit various conditions and needs. PMV37EN2R is ideal for use in automotive applications due to its small size, wide range of packages, low on-state resistance, and 100% testing. Its wide range of voltage and current ratings, excellent body diode characteristics, and low gate drive power requirement also make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PMV30XN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 3.2A SOT-... |
PMV37EN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 3.1A SOT-... |
PMV31XN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 5.9A SOT-... |
PMV30UN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 5.7A SOT-... |
PMV32UP/MIR | Nexperia USA... | 0.0 $ | 1000 | SMALL SIGNAL MOSFETP-Chan... |
PMV30UN2VL | Nexperia USA... | 0.07 $ | 1000 | MOSFET N-CH 20V 5.4A TO23... |
PMV37EN2R | Nexperia USA... | -- | 36000 | MOSFET N-CH 30V SOT23N-Ch... |
PMV33UPE,215 | Nexperia USA... | 0.16 $ | 9000 | MOSFET P-CH 20V 4.4A TO-2... |
PMV35EPER | Nexperia USA... | -- | 1000 | MOSFET P-CH 30V 5.3A TO23... |
PMV30UN2R | Nexperia USA... | 0.09 $ | 90000 | MOSFET N-CH 20V SOT23N-Ch... |
PMV30XPEAR | Nexperia USA... | -- | 54000 | MOSFET P-CH 20V TO-236ABP... |
PMV32UP,215 | Nexperia USA... | 0.16 $ | 3000 | MOSFET P-CH 20V 4A SOT-23... |
PMV3036GY | Hammond Manu... | 22.52 $ | 1000 | POLE MOUNT KIT PMK SERIES |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...