PMV37EN2R Allicdata Electronics
Allicdata Part #:

1727-2306-2-ND

Manufacturer Part#:

PMV37EN2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V SOT23
More Detail: N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surfac...
DataSheet: PMV37EN2R datasheetPMV37EN2R Datasheet/PDF
Quantity: 36000
Stock 36000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMV37EN2R is a single P-channel Enhancement Mode MOSFET developed by STMicroelectronics. As one of the most advanced devices of its kind, PMV37EN2R is designed, manufactured and qualified according to high-reliability automotive standards. This MOSFET’s small profile and low gate drive requirements enable it to be used in a wide range of automotive applications, such as powertrain, lighting, and security.

PMV37EN2R is a Power MOSFET with a high dV/dt capability, excellent gate charge characteristics and a low on-resistance. It is also 100% avalanche tested to ensure reliable operation that has no thermal runaway risk. The device has a wide Drain-Source voltage range from 12V to 200V, and a continuous Drain current up to 9A. It’s a perfect choice for switching applications that require low on-state resistance and high efficiency.

The device features excellent body diode characteristics due to its extremely high di/dt capability. This makes it suitable for high-frequency switching, providing fast response times and high efficiency. The PMV37EN2R also has a low reverse recovery time, and a low gate drive power requirement, making it ideal for use in a wide range of applications where space is limited.

PMV37EN2R is designed to be compatible with low-Voltage Logic (LV-ICs), which reduce the cost and increase the efficiency of power MOSFETs by reducing their gate drive power requirements. This allows the device to be used in applications where the cost of LV-ICs is attractive, while still retaining the high-frequency response characteristics and efficiency of power MOSFETs. In addition, PMV37EN2R can be easily controlled with logic level signals.

PMV37EN2R is an enhancement mode MOSFET, meaning it has a low resistance when turned on and a high resistance when turned off. It works by allowing electrical current to flow from the Drain to the Source when a voltage is applied to the Gate. When the Gate voltage is reversed, the reverse biased P-N junction prevents current from flowing. This allows the user to easily control the flow of electrical current, making it perfect for use in switching applications.

PMV37EN2R is manufactured with a wide variety of packages to suit different applications. It also has a wide range of features and parameters to suit various conditions and needs. PMV37EN2R is ideal for use in automotive applications due to its small size, wide range of packages, low on-state resistance, and 100% testing. Its wide range of voltage and current ratings, excellent body diode characteristics, and low gate drive power requirement also make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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