Allicdata Part #: | 568-10835-2-ND |
Manufacturer Part#: |
PMV37EN,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 3.1A SOT-23 |
More Detail: | N-Channel 30V 3.1A (Ta) 380mW (Ta) Surface Mount T... |
DataSheet: | PMV37EN,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 380mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMV37EN,215 is a field-effect transistor, or FET, designed for applications where a high level of current amplification and low noise operation is required. It is a single FET, which means that it has only one drain, source and gate terminal. The PMV37EN,215 is manufactured using N-channel enhancement mode technology, which allows it to be optimized for a variety of uses. This technology allows the PMV37EN, 215 to reduce power consumption, provide faster switching times, and reduce overall costs.
The PMV37EN, 215 uses a number of different electrical characteristics to determine the method of operation. It relies on voltage, current and temperature to determine its performance. This FET utilizes two capacitances to measure the μFET, which is the measure of the electrical charge between the gate and drain. The on-state resistance, RDS(on), is used to measure the resistance of the gate channel when the gate is turned on. The off-state leakage, Isub, is used to measure the amount of current that flows between the gate and source when the gate is turned off.
The PMV37EN, 215 has a number of different applications, including audio amplification and signal conditioning. In audio applications, the PMV37EN, 215 is used to amplify an audio signal. This FET is designed for low noise operation, which helps reduce interference and provides a clearer audio signal. In signal conditioning applications, the PMV37EN, 215 is used to amplify a signal before it is sent to the input of a device such as an audio amplifier or digital-to-analog converter.
The PMV37EN,215 can be used as a switch in circuits where it is necessary to turn the circuit on or off quickly. This FET is able to do this thanks to its fast switching times. It is also able to maintain a low on-state resistance, which allows it to operate at higher frequencies. The PMV37EN,215 has a variety of different uses in modern circuit designs, including use for data communications, power switching, and portable devices like cell phones.
The PMV37EN, 215 is a type of FET, which stands for Field Effect Transistor. A FET consists of two terminals, a source and a drain, which are connected to a gate. When a voltage is applied to the gate, the electric field between the source and the drain changes, resulting in an increase or decrease in the current passing through the device. FETs are used in a variety of applications, including amplifiers, switches and power controllers.
The PMV37EN, 215 is an extremely versatile FET that is designed to meet a variety of application requirements. It is designed for low noise operation, high current amplification and low on-state resistance. It is ideal for use in applications that require fast switching times and power savings, such as switching circuits, data communications and portable devices. The PMV37EN, 215 is an excellent choice for anyone looking for a reliable and efficient FET for their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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