PMV30UN,215

Vgs(th) (Max) @ Id:	700mV @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	460pF @ 20V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 4.5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	36 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMV30UN,215 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) of single type. It belongs to the family of transistors known as FETs (Field Effect Transistor), and within this, to the MOSFET category (Metal Oxide Semiconductor Field Effect Transistor). It is a power MOSFET with the following features: • Drain-Source Voltage: 650V. • RDS(on): 1.25ohm. • Gate Charge: 25nC. • Maximum Continuous Drain Current: 41A. • Power Dissipation (Tc = 25 ºC): 3.2W. • Operating Temperature: -55 - +150 ºC. • Mounting Type: Surface Mount. This type of transistor can be used in different applications such as:• Power Supply Circuits • Amplifiers • Low Noise Amplifiers • Switching Circuits • Low On-Resistance Applications Among the advantages of making use of this type of transistor is the low on-resistance, its a low gate charge, its fast switching speeds, and its good temperature performance. The working principle of PMV30UN,215 is based on the behavior of current in semiconductor devices. This type of transistor is a unipolar device, which means that it only uses charge carriers of one type (electrons or holes). The MOSFET is composed of three different layers of semiconductor material. The first one is the source, which is made from a n-type semiconductor. The second layer is the gate, which is separated from the source by a very thin insulation layer. The third layer is the drain, which is made of a p-type semiconductor. When the transistor is active, the gate allows the charge carriers to move from the source to the drain. The voltage applied to the gate affects the number of charge carriers that can move through the transistor and the current allowed to flow through. Depending on the polarity and the magnitude of the voltage applied to the gate, different amounts of current can flow through the transistor. In this way, the transistor can act as an amplifier or as a switching device. The PMV30UN,215 is a very useful MOSFET for multiple applications since it has high current handling capabilities and low gate charge. This makes it suitable for power supply circuits, low noise amplifiers, switching circuits and other applications that require low on-resistance. This type of transistor has very good temperature performance, which makes it an ideal choice for high temperature applications. Its fast switching speeds and low gate charge also make it the ideal choice for applications where low power consumption is necessary.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description