R1LV3216RSA-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV3216RSA-5SI#S0-ND

Manufacturer Part#:

R1LV3216RSA-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 32M PARALLEL 48TSOP I
More Detail: SRAM Memory IC 32Mb (4M x 8, 2M x 16) Parallel 55...
DataSheet: R1LV3216RSA-5SI#S0 datasheetR1LV3216RSA-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Base Part Number: R1LV3216
Description

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Introduction

R1LV3216RSA-5SI#S0 is a type of memory device that is widely used in various applications. It is composed of 32K-bit x 16 SRAMs that are designed for high capacity memory requirements for both consumers and industry applications. The following will discuss the application field and working principle of the R1LV3216RSA-5SI#S0.

Application Field

R1LV3216RSA-5SI#S0 is mainly used for memory in consumer and industry applications. For instance, it is commonly used for code storage in embedded systems, audio storage and playback devices, graphical storage and image processing in multimedia devices and data storage in monitoring systems. Furthermore, since it is a type of non-volatile memory, the R1LV3216RSA-5SI#S0 is also used in data logging devices or PC CPUs as a form of permanent storage.

Working Principle

The working principle of the R1LV3216RSA-5SI#S0 is based on its technical specifications of 32K-bit x 16 SRAMs. Composed of six SRAM levels, these SRAMs are designed for the highest capacity that can be achieved for memory applications. The SRAMs feature fast access and low power consumption, which make them ideal for storing large amounts of data. Each SRAM comprises of two equal arrays with 4,096 words per array. This allows the R1LV3216RSA-5SI#S0 to access two separate words at the same time. Furthermore, the SRAMs are designed for fast data transmission due to their low-power and narrow-voltage operation. This allows for rapid data transmission plus high power savings, which is beneficial for small data-intensive devices.The R1LV3216RSA-5SI#S0 is also equipped with a built-in error correction circuit that provides high accuracy and reliability. This circuit is capable of detecting and correcting single-bit errors in the data stored in the device. Furthermore, the device is equipped with a power-fail detection circuit that prevents data loss due to sudden power outages.

Conclusion

In conclusion, the R1LV3216RSA-5SI#S0 is a type of memory device mainly used for memory requirements in a variety of consumer and industry applications. It is composed of 32K-bit x 16 SRAMs that provide fast access and low power consumption, making them ideal for storing large amounts of data. Furthermore, the R1LV3216RSA-5SI#S0 is designed with a built-in error correction and power-fail detection circuit that ensure high accuracy and data safety.

The specific data is subject to PDF, and the above content is for reference

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