Allicdata Part #: | R1LV0808ASB-5SI#S0-ND |
Manufacturer Part#: |
R1LV0808ASB-5SI#S0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 8M PARALLEL 44TSOP II |
More Detail: | SRAM Memory IC 8Mb (1M x 8) Parallel 55ns 44-TSOP... |
DataSheet: | R1LV0808ASB-5SI#S0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | R1LV0808A |
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R1LV0808ASB-5SI#S0 is a type of memory that is widely used in various industries. It is a single-supply, low-voltage CMOS static random-access memory (SRAM) device. It is a two-transistor static RAM (SRAM) cell with a basic memory storage capacity of 8 Kbits. This type of memory is found in various products from microcontrollers to digital image processors.
The application field of R1LV0808ASB-5SI#S0 mainly involves systems where you need a stable and reliable type of memory to store data. This type of memory is used in a wide range of applications such as computing and audio/video related products, mobile phones, automotive applications and embedded system. In particular, it is very suitable for applications which deal with data communication and data logging operations as it has high performance and low power consumption.
The working principle of R1LV0808ASB-5SI#S0 is based on a pair of access transistors that form a cross-coupled inverter circuit. This circuit allows the memory to store a bit at the nodes of the inverter. When the sense lines are enabled, the voltage of the two nodes are applied to corresponding sense lines and are compared with two reference voltage values. When the voltages of two nodes match one of the reference voltage, the corresponding resistor-diode current source activates that causes either high or low state of the output.
The cross coupled inverter circuit structure of R1LV0808ASB-5SI#S0 is advantageous as it reduces the number of process steps for high density designs and also provides excellent read performance. Additionally, the low-voltage, single-supply design allows for a wide range of operating voltages which makes it suitable for use in a variety of applications.
By combining its excellent read performance, low power consumption and wide operating voltage ranges, the R1LV0808ASB-5SI#S0 memory can be used in a wide range of applications. Its single-supply low-voltage CMOS static RAM device will prove to be an invaluable asset for applications that involve storing and retrieving data in an efficient and reliable way.
The specific data is subject to PDF, and the above content is for reference
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R1LV0108ESF-5SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
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R1LV0216BSB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
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R1LV0808ASB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 44TSO... |
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