R1LV0216BSB-5SI#B0 Allicdata Electronics
Allicdata Part #:

R1LV0216BSB-5SI#B0-ND

Manufacturer Part#:

R1LV0216BSB-5SI#B0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM Memory IC 2Mb (128K x 16) Parallel 55ns 44-T...
DataSheet: R1LV0216BSB-5SI#B0 datasheetR1LV0216BSB-5SI#B0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: R1LV0216B
Description

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Memory is a form of technology used to store and recall information. R1LV0216BSB-5SI#B0 is a type of memory designed for use in a variety of applications. It is built with a high-density design that enables it to store large amounts of data, and provides a reliable way to store and access data quickly.

R1LV0216BSB-5SI#B0 utilizes multiple semiconductor memory technologies, such as magnetoresistive random access memory (MRAM) and magnetic random access memory (MRAM). MRAM and MRAM are both non-volatile, meaning they do not need power to maintain their state. This allows them to be used in applications such as networking, automotive, aerospace, industrial, and medical where power must be delivered reliably.

In addition to its non-volatile capabilities, R1LV0216BSB-5SI#B0 also offers high-speed, low-power operation. This is accomplished through advanced logic circuitry, allowing the memory to operate at speeds up to 6.75 gigabits per second. The low power operation also helps to reduce power consumption and improve system reliability.

R1LV0216BSB-5SI#B0 can be used in a wide range of applications. It is often used in networking and embedded systems, due to its reliable performance and high speeds. It is also frequently used for communications systems, storage systems, and data processing applications. Its reliable and low-power operation make it ideal for medical applications as well.

R1LV0216BSB-5SI#B0 operates on the principle of dual-spike memory architecture. This architecture combines the features of two memory technologies, DRAM and SRAM, allowing the memory to provide fast access times with low power consumption. The DRAM provides a large capacity and fast access times, while the SRAM provides low power operation. The dual-spike architecture allows the memory to switch between DRAM and SRAM when needed, providing the best combination of performance and power efficiency.

R1LV0216BSB-5SI#B0 is an ideal choice for many applications requiring high-performance memory with low power requirements. It offers the reliability and speed of DRAM, while delivering the low power characteristics of SRAM, providing a superior user experience. Its versatile design makes it a reliable option for a variety of applications, from networking to medical.

The specific data is subject to PDF, and the above content is for reference

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