Allicdata Part #: | R1LV0808ASB-5SI#B0-ND |
Manufacturer Part#: |
R1LV0808ASB-5SI#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 8M PARALLEL 44TSOP II |
More Detail: | SRAM Memory IC 8Mb (1M x 8) Parallel 55ns 44-TSOP... |
DataSheet: | R1LV0808ASB-5SI#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | R1LV0808A |
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The R1LV0808ASB-5SI#B0 is a type of memory, specifically a CMOS Static RAM, often referred to as a Static RAM (SRAM). SRAMs are used as part of a processor’s cache memory or as memory for digital signal processors.
The R1LV0808ASB-5SI#B0 SRAM is a high-speed, low-power CMOS device that operates from a single 5-volt power supply. It provides two ports of double data rate, allowing both simultaneous read and write operations.
Its applications include circuitry designs that require high-speed, low-power, high-endurance, fast access time and wide operating temperature ranges. It is used in a variety of embedded systems and data processing applications, including database indexing, text or image search and sorting tasks.
Working principle wise, the R1LV0808ASB-5SI#B0 is a synchronous SRAM, meaning that each access of data is performed synchronously with the accompanying clock signal – negating the need for the addressing or multiplexing circuitry that is used on asynchronous SRAMs. Data is written to the device purely based on the current address, the write enable signal, and the falling edge of the clock signal, making it a fast and reliable device for data storage.
It has 8k-bits of on-chip ROM, organized as 8,192 words by 8-bits. As such, it can store a total of 65,536-bits of data. It features a wide operating temperature range, as low as -40 degrees C and as high as 85 degrees C, making it suitable for a variety of automotive, industrial, military and commercial applications.
Furthermore, the R1LV0808ASB-5SI#B0 features a fast random access time of 10ns and a low read current of 850μA per device, making it ideal for applications where low power consumption and high performance are critical. It is also very reliable, with an estimated mean time between failure (MTBF) of greater than 10 years.
In conclusion, the R1LV0808ASB-5SI#B0 is a high-speed, low-power CMOS Static RAM ideal for a variety of embedded systems and data processing applications. Its fast random access time, low read current and wide operating temperature range make it suitable for automotive, industrial, military and commercial applications. It is a highly reliable device, with an estimated MTBF of greater than 10 years.
The specific data is subject to PDF, and the above content is for reference
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R1LV0108ESF-5SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
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