R1LV0208BSA-5SI#B1 Allicdata Electronics
Allicdata Part #:

R1LV0208BSA-5SI#B1-ND

Manufacturer Part#:

R1LV0208BSA-5SI#B1

Price: $ 3.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 2M PARALLEL 32STSOP
More Detail: SRAM Memory IC 2Mb (256K x 8) Parallel 55ns 32-sT...
DataSheet: R1LV0208BSA-5SI#B1 datasheetR1LV0208BSA-5SI#B1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.95470
10 +: $ 2.68191
25 +: $ 2.62382
50 +: $ 2.60933
100 +: $ 2.34014
250 +: $ 2.33141
500 +: $ 2.24554
1000 +: $ 2.13492
5000 +: $ 1.89916
Stock 1000Can Ship Immediately
$ 3.25
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP
Description

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The R1LV0208BSA-5SI#B1 is a type of memory device that is ideal for a variety of digital applications. This dynamic random access memory (DRAM) chip can store up to 8MB of data and is suitable for use in a variety of applications, including mobile phones and embedded systems. With its small footprint and competitive price tag, the R1LV0208BSA-5SI#B1 is an ideal choice for designers looking for a cost-effective DRAM solution.

The R1LV0208BSA-5SI#B1 uses a single 2.5V supply voltage and is equipped with support for 8-bit, 16-bit and 32-bit microprocessors. The device has an access time of 20ns and a cycle time of 30ns. The device provides an asynchronous interface for faster access. It has a maximum cycle time of 10MHz, allowing for a high speed data transfer. The R1LV0208BSA-5SI#B1 also features an external data bus and control signals for easier user access.

In terms of application field and working principle, the R1LV0208BSA-5SI#B1 can be used as non-volatile memory for any type of digital applications. The device is able to support both static and dynamic memory buses, allowing it to be used for different types of data storage applications. The memory is organized in blocks and each block is accessed through a separate address bus. The R1LV0208BSA-5SI#B1 also has an integrated burst sequencing circuitry that allows for high-speed operation. This feature enables the device to provide read, write, refresh and erase operations without interrupting the operating program.

The R1LV0208BSA-5SI#B1 provides a reliable and cost-effective solution for digital applications where data needs to be stored with a fast access time. It can be used in a variety of embedded systems, including mobile phones and other mobile devices. With its small footprint and competitive price, the R1LV0208BSA-5SI#B1 is an ideal choice for designers looking for a cost-effective DRAM solution. Its fast access time and integrated burst sequencing circuitry make it a great choice for any digital application that requires data to be read and written quickly.

The specific data is subject to PDF, and the above content is for reference

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