Allicdata Part #: | R1LV0816ASB-7SI#S0-ND |
Manufacturer Part#: |
R1LV0816ASB-7SI#S0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 8M PARALLEL 44TSOP II |
More Detail: | SRAM Memory IC 8Mb (512K x 16) Parallel 70ns 44-T... |
DataSheet: | R1LV0816ASB-7SI#S0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 8Mb (512K x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.4 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | R1LV0816A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R1LV0816ASB-7SI#S0 is a memory device that is used in a number of applications. It is a high-density, low-power, MOS chip that is used in memory applications.
The R1LV0816ASB-7SI#S0 device is a random-access memory (RAM) device that is typically used in high-speed applications such as computer systems, supercomputers and embedded systems. The use of the device in these applications is typically to provide fast, on-board memory.
The R1LV0816ASB-7SI#S0 has an 8-bit bus interface and an external data bus that are compatible with most applications. The bus can be used to access memory addresses or to control operations. It is also capable of supporting up to 8gb of RAM. The device is also used for memory-mapped I/O, including EPROMs and SRAMs.
The R1LV0816ASB-7SI#S0 is also used in digital signal processing (DSP) applications. The device is designed to integrate digital signal processing functions with the existing memory architecture and can be used to perform complex calculations, linear processing, and digital signal processing.
The R1LV0816ASB-7SI#S0 was designed to be used as a synchronous device, meaning that it supports both synchronous and asynchronous operation. This synchronous option allows the device to be used as an internal memory, memory-mapped I/O, or in systems where distributed memory access is necessary.
The R1LV0816ASB-7SI#S0 also features an internally embedded random-access memory (RAM) controller with SPI/I2C interfaces. This feature allows the device to connect to embedded memory applications or to external memory boards. The device can also be used for direct memory access (DMA), allowing for increased throughput and improved performance.
The R1LV0816ASB-7SI#S0 also features power-down support, allowing the device to be put into a low-power state when not in active use. This low-power state improves power efficiency, ensuring that the device uses minimal power when not in use.
The R1LV0816ASB-7SI#S0 is an advanced memory-related technology that is used in a variety of applications. It provides increased performance, improved power efficiency, and supports a wide range of memory applications, making it an ideal choice for embedded systems.
The specific data is subject to PDF, and the above content is for reference
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