R1LV3216RSD-7SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV3216RSD-7SI#S0-ND

Manufacturer Part#:

R1LV3216RSD-7SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 32M PARALLEL 52TSOP II
More Detail: SRAM Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70...
DataSheet: R1LV3216RSD-7SI#S0 datasheetR1LV3216RSD-7SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Supplier Device Package: 52-TSOP II
Base Part Number: R1LV3216
Description

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The R1LV3216RSD-7SI#S0 is a memory device that is typically used as a part of a products memory system. It is an electrical device that converts, stores, and retrieves data from a storage system. It is made up of a combination of non-volatile and volatile elements, and its structure makes it highly reliable and suitable for long-term usage.

R1LV3216RSD-7SI#S0 has become a vital component of the modern-day computing world. It is used in a wide array of applications. This includes but is not limited to gaming systems, computer systems, telecommunications, navigation, navigation systems and medical equipment.

Its extensive application is mainly due to its working principle. Unlike traditional storage systems which are either written to and then erased from the storage media, R1LV3216RSD-7SI#S0 uses Non-Volatile Flash Memory (NVFM) to achieve long-term data persistence. With the help of NVFM, R1LV3216RSD-7SI#S0 allows data to be written to or erased from the memory without the need for power. The data written to the memory is retained until the user needs to erase or modify it. This makes it ideal for applications that require long-term data retention.

Aside from its data retention capabilities, R1LV3216RSD-7SI#S0 also allows for a high level of protection for the data stored in memory. It is able to do this due to its advanced error correction and low write latency. This ensures that any write errors that may occur are corrected in a timely manner, and that data is safe from corruption or loss.

R1LV3216RSD-7SI#S0 storage device also has a high level of reliability which makes it the ideal choice in various applications. Some of these applications include fault-tolerant systems, medical equipment, automotive systems, and aerospace. In addition, it is widely used in applications that require long-term data retention as its Non-Volatile Flash Memory (NVFM) technology prevents data losses in the event of any power failure or other disruption.

In conclusion, the R1LV3216RSD-7SI#S0 memory device has been designed mainly to provide a reliable, long-term data storage system. Its combination of non-volatile and volatile elements provides the user with an extremely secure, yet accessible memory system. With its advanced error correction and low write latency, the device ensures data remains secure and consistent throughout its use. Furthermore, its application versatility ensures that it is suitable for a wide array of products and applications.

The specific data is subject to PDF, and the above content is for reference

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