R1LV5256ESA-5SI#B0 Allicdata Electronics
Allicdata Part #:

R1LV5256ESA-5SI#B0-ND

Manufacturer Part#:

R1LV5256ESA-5SI#B0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 256K PARALLEL 28TSOP
More Detail: SRAM Memory IC 256Kb (32K x 8) Parallel 55ns 28-T...
DataSheet: R1LV5256ESA-5SI#B0 datasheetR1LV5256ESA-5SI#B0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP
Base Part Number: R1LV5256E
Description

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Memory is a fundamental part of almost all computing systems. It is used to store data and instructions so that a computer can quickly process them. The R1LV5256ESA-5SI#B0 is a type of memory that is specially designed for use in embedded systems. It is a small, cost-efficient, low power, and high-performance storage solution for embedded applications.

The R1LV5256ESA-5SI#B0 is a multi-function memory chip with a number of features that make it well-suited for embedded applications. It is a highly reliable, non-volatile memory device that is ideal for applications such as data logging and code storage. The device is also capable of providing a high-speed burst mode data transfer rate which makes it an excellent choice for a variety of embedded applications.

The R1LV5256ESA-5SI#B0 is designed to provide the necessary low power consumption to help reduce power consumption in the system. It is a single-chip device which contains two banks of 256K x 16 RAM and a pair of 32K x 32 EEPROMs. The device also contains an internal watchdog timer which can be used to monitor internal operations to ensure system stability. Additionally, the chip includes a temperature sensor and three status flags that can be used to detect potential problems or to report real-time events.

The R1LV5256ESA-5SI#B0 employs a unique page-mode architecture, which allows the device to provide fast access to the stored data with minimal power consumption. This feature is especially important in embedded applications, where power consumption is a critical factor. Additionally, the device can operate in both CMOS and asynchronous modes, allowing the user to optimize system performance for the best possible results. The memory device also supports various types of memory access protocols, including burst and synchronous.

The working principle of the R1LV5256ESA-5SI#B0 is simple. When the signal Clock is given a low logic level, the memory is put into a waiting state. When the signal is given a high logic level, data can be read from or stored to the RAM. The EEPROM memory is written to or read from depending on the signal Chip Enable. The device is typically used in a synchronous mode, which allows for faster data transfer speeds.

The R1LV5256ESA-5SI#B0 is an ideal memory solution for embedded applications. Its low power consumption, fast access time, and high-performance capabilities make it a reliable memory solution for a variety of embedded applications. Its page-mode architecture and support for asynchronous and burst access protocols make it an ideal solution for embedded systems that require low power and high-performance memory solutions. Furthermore, the device’s temperature sensor and status flags allow for easy monitoring of the system and efficient detection of potential problems. Finally, its wide range of operating modes, including CMOS and asynchronous, make it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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