Allicdata Part #: | R1LV0216BSB-5SI#S1-ND |
Manufacturer Part#: |
R1LV0216BSB-5SI#S1 |
Price: | $ 2.35 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 2M PARALLEL 44TSOP II |
More Detail: | SRAM Memory IC 2Mb (128K x 16) Parallel 55ns 44-T... |
DataSheet: | R1LV0216BSB-5SI#S1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.13492 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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R1LV0216BSB-5SI#S1 is a memory device designed to store data and instructions. It is part of the embedded system, a type of computer used in consumer electronics and embedded systems that are used to control electrical devices or machinery. The memory device is usually a dedicated memory device or a shared memory device, where the processor is connected to a large memory array, and information is written to and read from the array by the processor.
The R1LV0216BSB-5SI#S1 is an ultra low power, high speed cellular RAM with a 1.4V to 5.5V power supply range, and is ideal for applications that require low power operation. It has a unique architecture that supports aggressive power management. The device executes instructions from internal memory, allowing it to execute code without accessing external memory, thereby reducing overall system power consumption. This RAM contains a 16-bit/word core with a total of 8,192 words and 128 bytes of onboard data RAM.
The R1LV0216BSB-5SI#S1 is designed for use in automotive, industrial and healthcare applications, where low power consumption, high speed and low temperature operation are desired features. It features enhanced on-board security features, including an AES 256-bit encryption engine, a real-time clock, and a UID chip that provides an additional layer of security for protecting data against unauthorized access.It is also well-suited for use in telecom, communication and networking applications, where low power and high performance are desirable. It has a low-power self-refresh feature that reduces power consumption by up to 70% and increases life expectancy. Furthermore, it is designed to be compatible with both Open Drain and Open Source control protocol interfaces.The working principle of the R1LV0216BSB-5SI#S1 is based on the architecture of the device, which allows it to act as an interpreter or interpreter of instructions or commands given by a processor, or by the user. These instructions are written in an instruction set, and they determine the memory operation or data access pattern. Its architecture allows it to respond quickly and efficiently to instructions, by accessing and processing data quickly, thereby reducing power consumption.
In addition, the R1LV0216BSB-5SI#S1 offers data reliability and integrity through its error correction code (ECC) system which can detect and correct potential errors caused by environmental constraints such as cosmic rays, power surges, and radiation. This ensures that data stored in the RAM is reliable and secure.
In conclusion, the R1LV0216BSB-5SI#S1 is an optimal choice for memory applications that require low power, high speed and low temperature operation. Its unique structure and architecture allows it to execute instructions from internal memory and provides enhanced on-board security and data integrity through error correction code. It is well suited for use in embedded systems, telecommunications, networking, and automotive, industrial and healthcare applications.
The specific data is subject to PDF, and the above content is for reference
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