Allicdata Part #: | R1LV0108ESF-5SR#S0-ND |
Manufacturer Part#: |
R1LV0108ESF-5SR#S0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 1M PARALLEL 32TSOP |
More Detail: | SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TS... |
DataSheet: | R1LV0108ESF-5SR#S0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP (8x20) |
Base Part Number: | R1LV0108E |
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Memory: R1LV0108ESF-5SR-S0 Application Field and Working Principle
The R1LV0108ESF-5SR-S0 Memory module is a new form of memory technology developed by engineers at HyperX. It is designed with a type of non-volatile memory that uses static electricity to store data in the form of electrical charge. In this way, it is able to maintain data even when the power is turned off. This is a major advantage for certain types of applications such as embedded systems, computer clusters, and industrial control systems, which require persistent data storage.
The R1LV0108ESF-5SR-S0 Memory module works by using a series of electrical charging and discharging cycles. When the power is turned on, the static electricity is transferred to the memory cells, which then stores the data in the form of electrical charge. When the power is turned off, the static electricity is dissipated and the data remains in the memory cells. The module is designed so that it can transfer the data to and from other memory modules or electrical components. The process of transferring data is known as read/write.
In addition to the static electricity, the R1LV0108ESF-5SR-S0 Memory module also includes NAND (not-AND) technology. This technology is used to control the flow of electrical current between the memory cells, which helps to maintain the data stored in the memory. This technology also helps reduce energy consumption, as the module does not require the same level of electrical power as traditional memory technologies.
The R1LV0108ESF-5SR-S0 Memory module is a highly reliable form of memory technology, and is ideal for use in applications where data must remain persistent even when the power is turned off. It is especially suitable for applications that require fast read and write performance, as it is able to store and transfer data at maximum speeds. Additionally, as the module uses low levels of energy, it is an excellent choice for applications that require low energy consumption.
Due to its diverse range of features and advantages, the R1LV0108ESF-5SR-S0 Memory module is an ideal choice for a wide range of applications. From embedded systems to computer clusters and industrial control systems, this memory module is an ideal choice for applications that require data to remain persistent even when the power is turned off.
The specific data is subject to PDF, and the above content is for reference
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