Allicdata Part #: | R1LV1616RSD7SI#B0-ND |
Manufacturer Part#: |
R1LV1616RSD-7SI#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 16M PARALLEL 52TSOP II |
More Detail: | SRAM Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70... |
DataSheet: | R1LV1616RSD-7SI#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 16Mb (2M x 8, 1M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 52-TFSOP (0.350", 8.89mm Width) |
Supplier Device Package: | 52-TSOP II |
Base Part Number: | R1LV1616R |
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Memory R1LV1616RSD-7SI#B0 Application Field and Working Principle
The R1LV1616RSD-7SI#B0 is a medium-sized dynamic random access memory (DRAM) device designed for use in circuit boards, especially for use in medium-sized computers, memory-intensive embedded systems, and medical device applications. It is also suitable for use as a cache memory in small data processing systems. This DRAM device features a 16-bit data bus, with a data access time of 8 clock cycles. Additionally, it has an extended operating temperature range, allowing it to be used in a variety of industrial and commercial thermal environments.
Memory Architecture
The R1LV1616RSD-7SI#B0 is a single in-line memory module (SIMM) with a 16-bit data bus, providing 16 megabits of data storage in total. The device contains 16 rows and 16 columns of DRAM cells, organized into banks of 4K x 16 bits. The device has an internal refresh controller to maintain data integrity, as well as an internal clock circuit for synchronizing data inputs/outputs. It also has separate input and output control signals for each bank to improve system performance.
Access Time
The R1LV1616RSD-7SI#B0 offers a fast access time of 8 clock cycles, which is significantly faster than many other DRAM devices in its class. This reduces system response time and allows for greater performance and throughput. Additionally, the device features a burst mode, which allows for up to four 16-bit data transfers at a time, greatly increasing throughput and improving system performance.
Power Consumption
The R1LV1616RSD-7SI#B0 is designed to be efficient in terms of power consumption. By incorporating advanced power management features, such as power-down modes, dynamic refresh and power saving features, the device helps save power and reduce system costs. Additionally, the device has a low-power standby mode, which allows the device to remain in a low-power state when not being actively used, helping to conserve energy and reduce power costs.
Security Features
The R1LV1616RSD-7SI#B0 has several built-in security features designed to help protect against malicious attacks. The device is designed to automatically detect and prevent memory address tampering, data integrity tampering and unauthorized accesses. Additionally, the device employs an on-chip encryption engine to encrypt data before it is written to the memory, and decrypt data as soon as it is read from the memory. This provides an additional layer of security and can help protect sensitive data.
Conclusion
The R1LV1616RSD-7SI#B0 is a medium-sized DRAM device designed to meet the needs of memory-intensive embedded systems, medical device applications and medium-sized computers. It has a 16-bit data bus, an 8-clock cycle access time, an extended operating temperature range, and a burst mode that allows for increased data throughput. Additionally, the device is power efficient and has several built-in security features designed to protect against malicious attacks.
The specific data is subject to PDF, and the above content is for reference
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R1LV0108ESN-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-7SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
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R1LV3216RSA-7SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV3216RSA-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV5256ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LV0108ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0216BSB-5SI#B1 | Renesas Elec... | 3.25 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
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R1LV0108ESA-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0208BSA-5SI#B1 | Renesas Elec... | 3.25 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0208BSA-5SI#S1 | Renesas Elec... | 2.35 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0216BSB-5SI#S1 | Renesas Elec... | 2.35 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
R1LV3216RSA-5SI#S1 | Renesas Elec... | 15.91 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
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R1LV0108ESA-5SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
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R1LV0108ESF-7SR#B0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0208BSA-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0216BSB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
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