R1LV0216BSB-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV0216BSB-5SI#S0-ND

Manufacturer Part#:

R1LV0216BSB-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM Memory IC 2Mb (128K x 16) Parallel 55ns 44-T...
DataSheet: R1LV0216BSB-5SI#S0 datasheetR1LV0216BSB-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: R1LV0216B
Description

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Memory

The R1LV0216BSB-5SI#S0 is a type of memory that is widely used in applications such as embedded system storage and industrial instrumentation. It is one of the many types of memory available today, and has a wide range of applications in various fields. Let\'s take a closer look at the application field and working principle of this device.

Application Field

The R1LV0216BSB-5SI#S0 memory is perfect for embedded systems. It is non-volatile and comes with a multiple high- speed read-write interface, making it ideal for applications that require short-duration high-speed operations. The memory is also compatible with a large number of microcontrollers, making it a versatile product in the field.

The device can also be used in instrumentation and industrial automation. With a wide temperature range and reliable operation, the R1LV0216BSB-5SI#S0 is perfect for heavy-duty industrial applications. Moreover, the device is also shock and vibration-resistant, making it suitable for use in potentially hazardous environments.

Working Principle

The working principle of the R1LV0216BSB-5SI#S0 is based on the SLC (Single-Level Cell) NAND Flash Technology. This technology utilizes the Charge Trapping Memory Cell structure, which allows for the storage of multiple levels of storage per cell. This is one of the key factors behind the fast read and write speeds of the device, making it ideal for applications that require high-speed operation.

Another key factor behind the speed of the device is its high-density architecture. This architecture provides the system with increased storage density, allowing for a higher level of data storage in the same physical space. The device also has an integrated error correction algorithm, which provides greater reliability during read and write operations.

Conclusion

The R1LV0216BSB-5SI#S0 is an excellent choice for embedded system storage, industrial instrumentation and automation applications. With its SLC NAND Flash Technology based architecture, fast read and write speeds and reliable operations, it provides a reliable and cost-effective solution for a wide range of requirements. In summary, this memory device is a great choice for all sorts of applications, making it a versatile device for both the general and industrial markets.

The specific data is subject to PDF, and the above content is for reference

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