Allicdata Part #: | R5011ANJTL-ND |
Manufacturer Part#: |
R5011ANJTL |
Price: | $ 1.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE LPTS |
More Detail: | N-Channel 500V 11A (Ta) 75W (Tc) Surface Mount LPT... |
DataSheet: | R5011ANJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.15630 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The R5011ANJTL is a high-performance, high-reliability, low current dissipation MOSFET which is often used in high frequency and power electronic applications. It is also known as a single-gate FET or a single isolated MOSFET. This component is commonly used in a wide variety of applications, including linear power supplies, switching power supplies, motor speed control and instrumentation.
The R5011ANJTL includes two electrical terminals, the source and the drain. It is a three-terminal device as it also includes a gate. The gate is the control terminal, allowing the user to control the switching of the device. Connecting the gate and the source terminals together forms the electrical channel between the two terminals. A positive voltage on the gate creates a negative potential in the source terminal and activates the device’s switch. When the gate voltage to source voltage ratio is greater than some threshold value Vth, the device becomes fully active, with very low series resistance between the source and the drain terminals.
The working principle of the R5011ANJTL leverages a voltage-controlled transistor region which is termed as “operations mode.” This is an important feature as it allows for contrast for high output gains. Furthermore, operation of the device is based on the source to gate voltage difference which is described as the gate-source voltage VG-S. The R5011ANJTL will remain in its ‘off’ state until the gate-source voltage reaches a specific threshold voltage Vth value, which can range from 2 to 4 volts.
Once the R5011ANJTL is in an “on” state, there is an abrupt change in the gate-source voltage, which is known as gain compression. The gain compression allows for spike current suppression and transient analysis, meaning that the current does not have to be too high before flipping the switch ‘on’ state.
In addition, when switched ‘on’ the gate current IG is kept below a certain limit. This feature helps minimize the on-state dissipation in most situations. Moreover, the R5011ANJTL is capable of operating in the subthreshold region. This allows the user to control the drain current according to the desired application, while maintaining very low power consumption.
The R5011ANJTL is mainly used in DC and AC power conversion systems, such as inverters, as well as in UPS systems. It is also widely used in digital and analog circuits. The typical applications include RF amplifiers, step-up / step-down converters, voltage governors and digital-to-analog converters.
In conclusion, the R5011ANJTL is a highly reliable, low current dissipation MOSFET which is mainly used in high frequency and power electronic applications. Its main features include gain compression, spike current suppression and the ability to operate in the subthreshold region. With these features, the R5011ANJTL can be used in a wide range of applications, such as DC and AC power conversion, RF amplifiers, voltage governors and digital-to-analog converters.
The specific data is subject to PDF, and the above content is for reference
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