Allicdata Part #: | R5016ANJTL-ND |
Manufacturer Part#: |
R5016ANJTL |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE LPTS |
More Detail: | N-Channel 500V 16A (Ta) 100W (Tc) Surface Mount LP... |
DataSheet: | R5016ANJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.77502 |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Series: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R5016ANJTL is a high-frequency N-channel MOSFET transistor, an ultra-low on-resistance and high-speed switching capability. This device is ideal for driving power MOSFETs and IGBTs in SMPS, Pol converters, and DRL applications. Its features, such as accurate current control, are especially suited for high-frequency switching. It is also suitable for applications that require significant reductions in EMI. It is an abundant entity of known transistors that are shaped like rectangular bars, having metallic electrodes embedded in them.
The application fields of this transistor are ample. It is mainly used in high-frequency switching applications such as power converters and switching power supplies. Additionally, its low channel on resistance and high-speed switching properties make this an ideal choice for PFC boost converters, telecom power supplies, and power management systems. Moreover, its low RDS ON enable applications such as automotive and industrial battery management, solar cell inverters, and power management systems. Besides, one of the main use of this transistor is seen in motor control designs, such as in the starter motors or engines, as MOSFETs switch the power required in order to bring the motor to life.
The working principle of this transistor is based on the MOSFET features. The MOSFET mainly relies on the field-effect next to the source region for conduction. The electric field present in the channel is generated by an input voltage applied to the gate. This field causes the current to flow from source to the drain. The transistor is activated when a voltage is applied to the gate, which is generally 5–10v less than the drain voltage. As the drain current increases, the drain-to-source voltage further reduces, eventually reaching the threshold voltage. This, in-turn, results in a steep voltage-current gain. The main feature that makes this transistor distinctive is the low channel on resistance and high-speed switching offered by the MOSFET.
The R5016ANJTL is thus, a high power switch component that enables low loss powers designs. The transistor is the go-to component for applications requiring switching with low heat dissipation. Its characteristics are seen to be very compatible with the various technologies that involve power conversion, such as automotive and other motor controls applications. The two main features of the component that make it ideal for these applications are the low-power on-resistance and the ability to switch at high rate of speeds.
The specific data is subject to PDF, and the above content is for reference
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