R5011FNX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

R5011FNX Application Field and Working Principle

The R5011FNX is a single N-channel silicon MOS FET (metal-oxide-semiconductor field-effect transistor) with ultra-low gate-to-drain capacitance and low on-resistance. It is a part of the small signal, high-speed MOS FET products of Renesas Electronics Corporation, a Japanese semiconductor manufacturer. These MOS FETs are designed for use in high-speed switching modes in order to attain optimal performance in a wide range of application fields.

The R5011FNX is an advanced MOSFET, which offers superior performance in applications that demand high speed, low noise operation and energy efficiency. This device is optimized for switching applications such as motor control, power conversion and PWM motor control. In such applications, the 13.5V drain source voltage, 30V gate source voltage, and 0.6mΩ (minimum) on-resistance make the R5011FNX an ideal choice to drive high power loads with an excellent combination of low noise and high speed switching.

The R5011FNX is constructed using N-channel MOS FET technology, which allows for low on-resistance and low gate-to-drain capacitance. This technology enables high-speed switching operation, superior thermal performance, and low gate-charge compared to other MOS FETs. The low on-resistance of the device helps to reduce power loss in the load while the low gate-to-drain capacitance minimizes switching noise and reduces the overall switching time. The device has a rated gate charge of 60 nC, allowing for fast driving of loads and improved system efficiency.

The R5011FNX is supplied in a small 4-pin SOT-89 package and has a maximum junction temperature of 125C. The device also has a built-in body-diode to suppress reverse current flow and to protect the device from current overload. The device has a rated total gate charge of 60 nC and a maximum drain source current rating of 3.2A.

The working principle of the MOS FET device is based on the ability of the gate region to control the conductivity of the device channels between the drain and source. When voltage is applied to the gate terminal, it attracts electrons and forms a conducting path between the drain and the source, which is known as the inversion layer. This forms the basis of the FET operation, as the amount of current that flows through the channel can be controlled by varying the voltage at the gate.

The R5011FNX is a high-performance MOS FET that has been designed to offer superior speed, low noise operation and excellent energy efficiency in switching applications. Its low on-resistance and low gate-to-drain capacitance, combined with its high-speed switching capability and the ability to drive high power loads make the R5011FNX an excellent choice for a wide range of switching applications.

The specific data is subject to PDF, and the above content is for reference