Allicdata Part #: | R5016FNX-ND |
Manufacturer Part#: |
R5016FNX |
Price: | $ 5.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 500V 16A TO-220FM |
More Detail: | N-Channel 500V 16A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | R5016FNX Datasheet/PDF |
Quantity: | 570 |
1 +: | $ 4.95180 |
10 +: | $ 4.41945 |
100 +: | $ 3.62395 |
500 +: | $ 2.93451 |
1000 +: | $ 2.47489 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 325 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The R5016FNX is a single N-channel power MOSFET produced by Renesas Electronics. It is part of Renesas’s R5016FNX series, which offers power MOSFETs with a low on-state resistance of 2mΩ max, high switch speed, and low gate charge. The R5016FNX is applicable for various power management tasks, and features a low output capacitance and high frequency operation.
The R5016FNX\'s Applications include load switches, DC-DC converters, and high-side switching circuits, such as those used in automotive body control systems, power inverter systems, and audio amplifiers. As such, it is suitable for applications that require higher reliability when compared to conventional discrete transistors. The R5016FNX is rated for an absolute maximum drain-source voltage (VDSS) of 100V, and a drain current (ID) of 16A.
The working principle of the R5016FNX is simple. It is a voltage-controlled field-effect transistor (FET) designed to operate in a common-source configuration. That is, the source terminal is connected to ground, the drain terminal is connected to the power source, and a voltage signal is applied to the gate terminal to control the flow of electrons (current) between source and drain. The MOSFET is designed to be an on/off switch: when the gate terminal receives a voltage signal, it will activate (turn on) the flow of current from the drain terminal to the source terminal. Conversely, when the gate terminal receives no voltage signal, the MOSFET will be off and the flow of current will be blocked.
The R5016FNX features a low total gate charge in order to provide low conduction losses, low power consumption, and greater efficiency. This makes the R5016FNX a highly reliable and efficient FET for power management tasks in harsh environments, such as those found in automotive or industrial applications. This is made possible through the combination of a wide operating temperature range and a low threshold voltage.
In conclusion, the R5016FNX is an ideal choice for applications requiring high speed, low power consumption and high reliability. It is suitable for load switches, DC-DC converters, and high-side switching circuits, and its combination of low gate charge and low output capacitance makes it perfect for applications demanding greater efficiency in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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