R5013ANJTL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	380 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
FET Feature:	--
Power Dissipation (Max):	100W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LPTS
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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The R5013ANJTL is a high-performance, low-noise dual-gate MOSFET developed by ROHM Semiconductor. This type of MOSFET is capable of times faster switching speed than other transistors, making it ideal for high-speed switching applications. This article will discuss the application field and working principle of R5013ANJTL.The R5013ANJTL is primarily used for RF amplifier and mixer devices, where its high current handling capability, high-frequency capability and low packaging cost make it highly attractive. The transistor operates in a wide range of temperature range and can handle high power levels. In addition, the all-shelf packaging of the R5013ANJTL makes it well-suited for surface mount technology.The R5013ANJTL is designed with dual gates that allow the device to operate at an operating voltage of 10V and a maximum operating temperature of 125C. The dual gates make the device more sensitive to very low voltages than single gate MOSFETs and enable it to switch faster at higher frequencies. The device is rated for a maximum drain current of 15A and a maximum drain-source voltage of 100 volts. The device has a low RDS(ON) value, which reduces power loss and helps improve efficiency. It is also capable of handling high surge currents of up to 3A.The main principle of operation for the R5013ANJTL is the same as for any other MOSFET. The device interacts with a gate voltage to change the drain current by varying the width of its channel. When the gate voltage is low, the channel is narrow and the source is at its most negative, while when the gate voltage is high, the channel expands and the source has its highest positive voltage. The size of the channel is determined by the amount of gate voltage, which then determines the amount of current that passes through the device.In addition, the R5013ANJTL has a power-saving feature called low gate charge. This feature minimizes the gate charge and maximizes the power use efficiency. The low gate charge also helps prevent the device from being overdriven and ensures a high electrostatic discharge (ESD) tolerance. Moreover, the R5013ANJTL also has a low leakage current and a high reverse transfer capacitance (RTC) for better performance and reliability.Overall, the R5013ANJTL is a versatile and reliable MOSFET that is perfectly suited for a wide range of applications. Its low power consumption, low turn-on and off times and high ESD tolerance make it ideal for high-frequency switching applications. Furthermore, its all-shelf packaging and high drain current capability make it well-suited for surface mount technology.

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